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Self-induced transparency in semiconductor by single-photon excitation by an ultrashort light pulse

F. Brukner, В. С. Днепровский, D. G. Koshchug, V. U. Khattatov

Published Jul 1, 1973• 3 citations
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Self-induced transparency of a semiconductor

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Ultrashort light pulses propagating through a resonant photonic crystal can be reshaped to shorter duration output through self-induced transparency. The reshaping process is shown to result from the unique transmission behavior of light pulses through the photonic structure. Pulse compression and pulse merging, with which multipeak optical pulses can be evolved to give rise to a single-peak, high-quality transmitted pulse output, are obtained. The pulse propagation in a resonant photonic crystal is compared with that in a bulk atomic medium, which shows that the effect of pulse reshaping is much more powerful in the former than in the latter.
Light matter coherent interactions require that the coherent state induced in the matter be maintained for the duration of the observation. The only way to induce and observe such interactions in room temperature semiconductors, where the coherence time is of the order of a few hundred femtoseconds, is to use ultrashort pulse excitations and an ultrafast characterization technique. For media comprising an ensemble of nanostructure semiconductors such as self-assembled quantum dots, the gain broadening inhomogeneity also affects the interaction. Moreover, when gain media in the form of an active waveguide, such as optical amplifiers, are used, the interaction is distributed and includes nonresonant incoherent phenomena that occur simultaneously with the coherent effects. Such a complex system can exhibit, nevertheless, clear coherent interactions even at room temperature. Using InAs/InP quantum dot and wirelike quantum dash amplifiers, Rabi oscillations, self-induced transparency, coherent control using spectral pulse shaping, Ramsey interference, and photon echo have been demonstrated. The characterization employed cross frequency resolved optical gating, and the experiments were accompanied by a comprehensive finite difference time domain model that solves the Maxwell and Lindblad equations. This work has major implications on the understanding of the details of dynamical processes in active semiconductor devices, on short pulse generation from semiconductor lasers, and on various future quantum devices.
Our recent studies of methods for obtaining ultrashort light pulses and analysis of the impact of ultrashort optical pulses on classical and quantum micro-objects with the identification of the determining role of the degree of unipolarity of pulses (maximum for strictly unipolar pulses) in the efficiency of direct laser acceleration of charged particles and excitation of atoms and molecules have been reviewed. Special attention has been paid to the coherent mode locking regime in lasers, which is implemented when the laser pulse duration is less than the relaxation time of the working transition in media with resonance amplification and absorption (laser analog of the phenomenon of self-induced transparency). Experimental data on coherent mode locking in a titanium-sapphire laser with a cell with rubidium vapor at self-induced transparency in rubidium have been presented. The interaction of ultrashort pulses in resonant media has also been analyzed.