Mott transitions in multi-orbital electron systems

Masahisa Koga, Akihisa Koga

Akihisa Koga, Norio Kawakami, Thomas Maurice Rice +1 more

昌久 古賀, Akihisa Koga

王义林, 黄理, 杜亮 +1 more

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting ?. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

Yilin Wang, Li Huang, Liang Du +1 more

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ . We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

Jixun K. Ding, Martin Claassen

Quantum geometry quantifies how the single-particle Bloch wavefunction changes in phase and amplitude across the Brillouin Zone. In multi-orbital systems where bands have strongly mixed orbital composition, quantum geometry plays a vital role in determining the ground state and low-energy properties of interacting electronic systems. In this work, we show that Mott metal-insulator transitions, as well as transitions between different magnetic orders within the Mott insulating phase, can be driven by the quantum geometry of the underlying Bloch band, thereby providing a mechanism complementary to conventional bandwidth-tuned Mott transitions. By studying the Kane-Mele-Hubbard model using exact diagonalization, we demonstrate that in in half-filled and topologically-trivial bands, quantum geometric properties of the Bloch states alone can act as a tuning knob for Mott metal-to-insulator and affect the competition between ferromagnetism and antiferromagnetism. We show that both transitions may be heuristically understood via non-local Coulomb scattering in a basis of exponentially localized Wannier functions. These results highlight the role of quantum geometry beyond topological settings as a governing principle for conventional Mott and magnetic physics in multi-orbital and moiré materials.