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Ultrafast Phenomena and Nanophotonics

Resonance fluorescence of GaAs quantum dots with near-unity photon indistinguishability (Conference Presentation)

Lukas Hanschke, Eva Schöll, Lucas Schweickert, Katharina D. Zeuner, Marcus Reindl, Saimon Filipe Covre da Silva, Thomas Lettner, Rinaldo Trotta, Jonathan James Finley, Kai Müller, Armando Rastelli, Val Zwiller, Klaus D. Jöns

Published Mar 17, 2020• 1 citation
Publisher

Abstract

We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.

DOI
10.1117/12.2550116

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We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.
We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.
Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on demand. One promising candidate is strain free GaAs/AlGaAs quantum dots obtained by aluminum droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of [Formula: see text], without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g., as quantum light sources for quantum repeater architectures.
Efficient generation and detection of coherent single photons are key to advances in photonic quantum technologies such as quantum computation, quantum simulation, and quantum communication. Among many quantum emitters, semiconductor quantum dots are promising due to their deterministic and high-rate single-photon emission and the possibility of integration into nanostructures. However, poor quantum coherence between single photons created by independent emitters poses a major roadblock. Here, we present near-unity two-photon interference visibilities from two separate GaAs quantum dots. This high visibility (~93%) is achieved under rigorous conditions: there is no Purcell enhancement, no temporal post-selection, no narrow spectral filtering, nor frequency stabilization. One key component is the heterostructure, an n-i-p diode using material of excellent quality. The quantum dot charge is locked via Coulomb blockade; within a charging plateau, the exact emission frequency can be tuned via the bias applied to the gate; the charge noise is very low. A second key component is the quantum dot itself: the relatively large size confers multiple benefits. Our results suggest that GaAs quantum dots represent a versatile choice for generating identical photons from multiple emitters.
We report on two-photon interference of highly indistinguishable single photons emitted by a quantum dot. Strictly resonant excitation with picosecond laser pulses has been used to prepare coherent states with a significantly increased coherence time $({T}_{2}\ensuremath{\sim}1\text{ns})$ and reduced lifetime $({T}_{1}\ensuremath{\sim}650\text{ps})$, as compared to a nonresonant excitation scheme. Indistinguishable photons, with visibilities greater than 70%, have been observed by measuring the Hong-Ou-Mandel dip without postselection of the interfering photons. Near-unity indistinguishable photons should be achievable by preventing fluctuations in the electrostatic environment in the vicinity of the dots, considered as an important source of decoherence.
The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include self-organized InAs/GaAs quantum dots and have a comparatively low Q factor in the range of 2000–3000, have been studied. It has been shown that a state with a given spin configuration—exciton with a certain polarization or trion—can be initialized in a single quantum dot under the coherent resonant linearly polarized optical pumping by a π pulse. The measurement of two-photon interference by the Hong–Ou–Mandel scheme has demonstrated that the degree of indistinguishability of successively emitted single photons is 97 and 93% at a time delay of 2 and 250 ns, respectively. Prospects of application of such sources in optical quantum computing schemes have been discussed.