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arXiv:1901.09721 · Nano Letters

Resonance Fluorescence of GaAs Quantum Dots with Near-Unity Photon Indistinguishability

Eva Schöll, Lukas Hanschke, Lucas Schweickert, Katharina D. Zeuner, Marcus Reindl, Saimon Filipe Covre da Silva, Thomas Lettner, Rinaldo Trotta, Jonathan James Finley, Kai Müller, Armando Rastelli, Val Zwiller, Klaus D. Jöns

Published Mar 13, 2019• 93 citations

Abstract

Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on demand. One promising candidate is strain free GaAs/AlGaAs quantum dots obtained by aluminum droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of [Formula: see text], without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g., as quantum light sources for quantum repeater architectures.

DOI: 10.1021/acs.nanolett.8b05132

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We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.

We investigate the indistinguishability of single photons generated from strain-free GaAs/AlGaAs quantum dots using pulsed resonance fluorescence techniques. In pulsed two-photon interference measurements we observe a single photon indistinguishability with a raw visibility of 95%. This can be traced back to the short intrinsic lifetime of excitons and trions confined in the GaAs quantum dots and demonstrates that for this material system the generation of single photons is possible with near-unity indistinguishability even without Purcell enhancement.

Abstract The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

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Efficient generation and detection of coherent single photons are key to advances in photonic quantum technologies such as quantum computation, quantum simulation, and quantum communication. Among many quantum emitters, semiconductor quantum dots are promising due to their deterministic and high-rate single-photon emission and the possibility of integration into nanostructures. However, poor quantum coherence between single photons created by independent emitters poses a major roadblock. Here, we present near-unity two-photon interference visibilities from two separate GaAs quantum dots. This high visibility (~93%) is achieved under rigorous conditions: there is no Purcell enhancement, no temporal post-selection, no narrow spectral filtering, nor frequency stabilization. One key component is the heterostructure, an n-i-p diode using material of excellent quality. The quantum dot charge is locked via Coulomb blockade; within a charging plateau, the exact emission frequency can be tuned via the bias applied to the gate; the charge noise is very low. A second key component is the quantum dot itself: the relatively large size confers multiple benefits. Our results suggest that GaAs quantum dots represent a versatile choice for generating identical photons from multiple emitters.

Integrated single photon sources are key building blocks for realizing scalable devices for quantum information processing. For such applications highly coherent and indistinguishable single photons on a chip are required. Here we report on a triggered resonance fluorescence single photon source based on In(Ga)As/GaAs quantum dots coupled to single- and multimode ridge waveguides. We demonstrate the generation of highly linearly polarized resonance fluorescence photons with 99.1% (96.0%) single photon purity and 97.5% (95.0%) indistinguishability in case of multimode (single mode) waveguide devices fulfilling the strict requirements imposed by multi-interferometric quantum optics applications. Our integrated triggered single photon source can be readily scaled up, promising a realistic pathway for on-chip linear optical quantum simulation, quantum computation, and quantum networks.