The development of superconducting quantum circuits increasingly involves the exploration of chemically distinct materials and complex multilayered structures. Accelerating this trend may benefit from low-damage, materials-agnostic patterning techniques that are compatible with a broad range of materials. Here, we investigate the utility of low-energy ion beam etching (IBE), a physical patterning technique, as an alternative to reactive ion etching for fabricating low-loss superconducting resonators. We use niobium (Nb) resonators as a test platform, leveraging their well-characterized performance metrics for benchmarking. To address IBE-induced surface redeposition, we introduce an in situ aluminum capping layer combined with targeted post-fabrication chemical treatment. This strategy yields resonators with internal quality factors as high as 6 × 105 in the single-photon regime at 50 mK. These results establish low-energy IBE as a promising patterning technique for superconducting devices, with the potential to accelerate development across chemically diverse and multilayered material platforms.
This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiN
IAlN
ITiN junctions yielded values ranging from 150
μAto 2
μA, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.
The aim of this thesis was to realize superconducting quantum bits by using novel fabrication techniques and materials in order to enhance the coherence time of the former devices. For the system to be studied we chose the ux-biased phase qubit, which consists of a Josephson junction integrated in a superconducting loop. This qubit realization has some advantages, which make it an ideal test-bed for different fabrication technologies and materials. Relatively large Josephson junctions can be used in the phase qubit realization, which are easy to be fabricated by using standard lithographic technology with the flexibility of employing various fabrication techniques and materials. The coherence of current-generation of superconducting qubits seems to be limited by intrinsic sources of noise and energy loss, related to materials' defects (two-level systems, TLSs) on the surfaces and interfaces of the superconducting lms, and in the bulk of the dielectric films used for the microelectronic realization of the circuits. For this reason, we aimed our research activities on the realization of low loss dielectrics (a-Si:H), on its integration with Josephson junction technologies, on the protection of the superconducting films' surfaces from unwanted contamination, and on the optimization of the circuit design and fabrication processes.