Tunneling-noise-induced spin dephasing of two electrons in an arbitrarily detuned double quantum dot

Katarzyna Roszak, Paweł Machnikowski

We show that singlet-triplet superpositions of two-electron spin states in a double quantum dot undergo a phonon-induced pure dephasing which relies only on the tunnel coupling between the dots and on the Pauli-exclusion principle. As such, this dephasing process is independent of spin-orbit coupling or hyperfine interactions. The physical mechanism behind the dephasing is elastic phonon scattering, which persists to much lower temperatures than real phonon-induced transitions. Quantitative calculations performed for a lateral GaAs/AlGaAs gate-defined double quantum dot yield microsecond dephasing times at sub-Kelvin temperatures, which is consistent with experimental observations.

Robert Joynt, Maxim Vavilov, Luke S. Langsjoen +1 more

Katarzyna Roszak, Paweł Machnikowski

Phonon-induced dephasing of two-electron spin states in two vertically stacked self-assembled GaAs/InGaAs quantum dots is studied.A pure dephasing process due to elastic phonon scattering is found to dominate at low temperatures.This process is independent of the spin-orbit coupling and does not require the presence of a magnetic field.It relies on interdot tunneling and the Pauli principle, which make the double quantum dot gate for spin based quantum computing possible, and therefore cannot be avoided.

Jorge Villavicencio, I. K. A. ROMERO MALDONADO, L. Debora Contreras-Pulido +2 more

Oren Zarchin

Madhu Thalakulam

The radio-frequency superconducting single electron transistor (RF-SET) is a highly sensitive and fast electrometer operating near the quantum limit. The back-action current noise of the SET induces voltage fluctuations on the system it is coupled to, dephasing its charge states. Here we propose to study the back action of the RF-SET by means of a double quantum dot (DQD) and, an RF-SET electrostatically coupled to one of the two dots. The inelastic current through the DQD is very sensitive to the spectral density of the voltage fluctuations in the nearby environment. By properly choosing the dot size and inter-dot tunnel barrier thickness, one can cause inelastic process to dominate the transport processes. A measurement of the inelastic current through the double dot system can then be used to calculate the spectral density of noise associated with the RF-SET and hence its back action. The design, fabrication and characterization of an RF-SET/DQD system is discussed in this work. Real-time studies of electron dynamics in coupled dots are also addressed.