Novel solid-state qubits have a lot to offer for quantum information processing because of the potential simplicity of engineering quantum computational hardware similar to modern silicon-based electronics. This work presents optical and electron-spin properties of a novel germanium-vacancy defect in diamond. The defect center combines high brightness and exceptional spectral stability with microwave and optical access to electron spin. The combination of a spin-\textonehalf{} qubit and an optical interface makes possible of the germanium-vacancy defect in scalable quantum networks.Novel solid-state qubits have a lot to offer for quantum information processing because of the potential simplicity of engineering quantum computational hardware similar to modern silicon-based electronics. This work presents optical and electron-spin properties of a novel germanium-vacancy defect in diamond. The defect center combines high brightness and exceptional spectral stability with microwave and optical access to electron spin. The combination of a spin-\textonehalf{} qubit and an optical interface makes possible of the germanium-vacancy defect in scalable quantum networks.

arXiv:1612.02947Physical review. B./Physical review. BAug 18, 2017171 citations

Optical detection of paramagnetic defects in diamond grown by chemical vapor deposition

Clément Pellet-Mary, Paul H. Huillery, M. Perdriat +2 more

The electronic spins of the nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) grown diamonds form ideal probes of magnetic fields and temperature, as well as promising qubits for quantum information processing. Studying and controlling the magnetic environment of NV centers in such high-purity crystals is thus essential for these applications. We demonstrate optical detection of paramagnetic species, such as hydrogen-related complexes, in a CVD-grown diamond. The resonant transfer of the NV centers' polarized electronic spins to the electronic spins of these species generates conspicuous features in the NV photoluminescence when employing magnetic field scans along the [100] crystal direction. Our results offer prospects for more detailed studies of CVD-grown processes as well as for coherent control of the spin of novel classes of hyperpolarized paramagnetic species.The electronic spins of the nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) grown diamonds form ideal probes of magnetic fields and temperature, as well as promising qubits for quantum information processing. Studying and controlling the magnetic environment of NV centers in such high-purity crystals is thus essential for these applications. We demonstrate optical detection of paramagnetic species, such as hydrogen-related complexes, in a CVD-grown diamond. The resonant transfer of the NV centers' polarized electronic spins to the electronic spins of these species generates conspicuous features in the NV photoluminescence when employing magnetic field scans along the [100] crystal direction. Our results offer prospects for more detailed studies of CVD-grown processes as well as for coherent control of the spin of novel classes of hyperpolarized paramagnetic species.

arXiv:2012.05791Physical review. B./Physical review. BMar 24, 202111 citations

Optical geometric manipulation of an electron spin in diamond

Yuhei Sekiguchi

The International Commission for OpticsMay 16, 20170 citations

Calculation of the optical properties of the nitrogen-vacancy center in diamond

Denis Antonov, Jörg Wrachtrup, Gabriel Bester

Bulletin of the American Physical SocietyMar 21, 20130 citations

Electronic structure of the negatively charged silicon-vacancy center in diamond

Lachlan J. Rogers, Kay D. Jahnke, Marcus W. Doherty +8 more

The negatively charged silicon-vacancy (SiV${}^{\ensuremath{-}}$) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\ensuremath{\langle}111\ensuremath{\rangle}$ aligned split-vacancy structure with ${\mathrm{D}}_{3\mathrm{d}}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.The negatively charged silicon-vacancy (SiV${}^{\ensuremath{-}}$) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\ensuremath{\langle}111\ensuremath{\rangle}$ aligned split-vacancy structure with ${\mathrm{D}}_{3\mathrm{d}}$ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.

arXiv:1310.3131Physical Review BJun 2, 2014227 citations

{\mathrm{D}}_{3\mathrm{d}}

symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.