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IEEE International Conference on ASIC (ASICON)

An adjustable amplitude and pulse-width laser modulation driver with active feedback for QKD experiments

Chenxi Zhu, Futian Liang, Bo Feng, Xinzhe Wang, Yulong Zhu, Cheng-Zhi Peng

Published Oct 1, 2019• 2 citations
Publisher

Abstract

This paper presents a laser modulation driver using active feedback in a 130-nm CMOS process. The driver is designed for laser modulator in quantum key distribution (QKD) experiments. The laser modulator requires a drive signal with adjustable amplitude and pulse-width. We employ a delay-adjustable delay chain and a multi-stage amplifier with active feedback to provide a current pulse signal with an adjustable pulse-width from 110 ps to 3.3 ns and an amplitude adjustment range of 0 mA to 14.4 mA to drive the laser modulation. By employing the active feedback, the rising/falling edge of the output current in the proposed circuit can reach 70 ps, while the data rate is up to 625 Mb/s. The post layout simulation results indicate that the modulation driver can meet the requirements of the QKD experiments.

DOI
10.1109/asicon47005.2019.8983469

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This paper presents a laser modulation driver using active feedback in a 130-nm CMOS process. The driver is designed for laser modulator in quantum key distribution (QKD) experiments. The laser modulator requires a drive signal with adjustable amplitude and pulse-width. We employ a delay-adjustable delay chain and a multi-stage amplifier with active feedback to provide a current pulse signal with an adjustable pulse-width from 110 ps to 3.3 ns and an amplitude adjustment range of 0 mA to 14.4 mA to drive the laser modulation. By employing the active feedback, the rising/falling edge of the output current in the proposed circuit can reach 70 ps, while the data rate is up to 625 Mb/s. The post layout simulation results indicate that the modulation driver can meet the requirements of the QKD experiments.
Laser modulation is a process to modulate the photons to different states in quantum key distribution (QKD) system. A laser modulation driver, which is a pre-driver for the laser modulator, is presented in this paper. The laser modulation driver is implemented in a 130-nm complementary metal oxide semiconductor (CMOS) process. The laser modulation driver can provide a current pulse signal with an adjustable amplitude and an adjustable pulse-width to a distributed power amplifier. The pulse-width of the current signal can be adjusted from 300 ps to 3800 ps, the maximum adjustable amplitude is 14.4 mA, and the data rate can reach 625 Mb/s. According to the test results, the laser modulation driver can meet the requirements of the electro-optic modulator (EOM) in QKD system, and it can be used in the laser modulation circuit in QKD experiments.
We present a laser source driver using a 130-nm complementary metal oxide semiconductor technology, named quantum laser source driver 2018 (QLSD2018). QLSD2018 drives the optical source with a current pulse signal, and the output of QLSD2018 has an adjustable pulse-width from 300 ps to 3.8 ns and an adjustable amplitude up to 70 mA. The data rate is up to 625 Mb/s, and the extinction ratio of the optical source (the 1550-nm distributed feedback laser or the 850-nm vertical-cavity surface-emitting laser) driven by QLSD2018 can reach 26 dB. The test results indicate that QLSD2018 can be used in quantum key distribution experiments. Using QLSD2018 on the transmitter side can significantly simplify the peripheral circuit of the optical source.
Quantum key distribution (QKD) research has yielded highly fruitful results and is currently undergoing an industrialization transformation. In QKD systems, electro-optic modulators are typically employed to prepare the required quantum states. While various QKD systems operating at GHz repetition frequency have demonstrated exceptional performance, they predominantly rely on instruments or printed circuit boards to fulfill the driving circuit function of the electro-optic modulator. Consequently, these systems tend to be complex with low integration levels. To address this challenge, we have introduced a modulator driver integrated circuit in 0.18 µm SiGe BiCMOS technology. The circuit can generate multiple-level driving signals with a clock frequency of 1.25 GHz and a rising edge of ∼50 ps. Each voltage amplitude can be independently adjusted, ensuring the precise preparation of quantum states. The measured signal-to-noise ratio was more than 17 dB, resulting in a low quantum bit error rate of 0.24% in our polarization-encoding system. This work will contribute to the advancement of QKD system integration and promote the industrialization process in this field.
Quantum key distribution (QKD) offers the ability of information theoretic security key exchange. The secure key rate is an important indicator for the practical QKD systems, which determines what kinds of applications can be supported. One most effective way to enhance the secure key rate is to increase the system repetition frequency. Here, we report an implementation of a high-speed DC-coupled modulator driving circuit with a repetition rate of up to 5 GHz. The circuit outputs a multi-amplitude return-to-zero pattern pulse with a maximum amplitude of 7.5 V. The design adapts to the various electro-optic modulators widely employed in QKD systems. The minimum pulse width is measured as 75 ps, with the relative noise level less than 1.5% for all the output amplitudes under random modulation.
The single photon source is an important part of the quantum key distribution (QKD) system. At present, the single photon source is large in size and complex in structure for a lot of discrete components which are used. The miniaturization of the photon source is the tendency of the QKD system. We integrate all laser driver electronic module into one single ASIC chip, which can be used to drive the 1550nm DFB laser in random pulse mode and it can greatly reduce the volume of the single photon source. We present the design of the chip named LSD2018 and simulation results before the tape-out. The LSD2018 is fabricated with a 130 nm CMOS process and consists of a discriminator, an adjustable pulse generator, a bandgap reference, an SPI bus, and an amplitude-adjustable current pulse driver. The electronic random pulse from the driver can go 20mA to 120mA in amplitude and 400ps to 4ns in pulse width. The parameters can be set by an SPI bus.
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.