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Acta Physica Polonica A

Optical Characterization of Nitrogen-Vacancy Centers Created by Proton Implantation in Diamond

Mateusz Schabikowski, Adam M. Wojciechowski, Marzena Mitura‐Nowak, Mariusz Mrózek, Andrzej Kruk, Bogusław Rajchel, Wojciech Gawlik, M. Marsza k

Published Jan 1, 2020• 4 citations
Publisher

Abstract

We report the results of high-energy (1.8 MeV) proton implantation in a type-Ib diamond.The focused ion beam was used to introduce vacancies in a 20 µm-deep layer with applied doses in the range of 10 13 to 10 16 ions/cm 2 .The sample was subsequently annealed in vacuum which resulted in migration of vacancies and their association with the nitrogen present in the diamond matrix.We studied properties of the formed nitrogen-vacancy centers with photoluminescence and optically detected magnetic resonance.The samples are aimed to be used in sensing applications, e.g., magnetometry and bio-magnetic imaging.

DOI
10.12693/aphyspola.137.9

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We report the results of high-energy (1.8 MeV) proton implantation in a type-Ib diamond.The focused ion beam was used to introduce vacancies in a 20 µm-deep layer with applied doses in the range of 10 13 to 10 16 ions/cm 2 .The sample was subsequently annealed in vacuum which resulted in migration of vacancies and their association with the nitrogen present in the diamond matrix.We studied properties of the formed nitrogen-vacancy centers with photoluminescence and optically detected magnetic resonance.The samples are aimed to be used in sensing applications, e.g., magnetometry and bio-magnetic imaging.
We present an experimental study of the longitudinal and transverse relaxation of ensembles of negatively charged nitrogen-vacancy (NV-) centers in a diamond monocrystal prepared by 1.8 MeV proton implantation. The focused proton beam was used to introduce vacancies at a 20 µµm depth layer. Applied doses were in the range of 1.5×1013 to 1.5×1017 ions/cm2. The samples were subsequently annealed in vacuum which resulted in a migration of vacancies and their association with the nitrogen present in the diamond matrix. The proton implantation technique proved versatile to control production of nitrogen-vacancy color centers in thin films.
Precise control over the spatial distribution and charge state of nitrogen-vacancy (NV) centers in diamond is a key requirement for further advancing this platform in quantum sensing and photonic applications. Here, we investigate nitrogen ion implantation as a scalable method to engineer NV centers in bulk single-crystalline (SC) and a 5 μ m -thick polycrystalline (PC) diamond membrane. Nitrogen-doped regions (1–80 ppm) were fabricated using a 0.7 MeV ion beam and high-temperature annealing, with NV center formation verified by confocal fluorescence imaging and spectral analysis. In SC bulk diamond, we estimate the NV concentration from spectral analysis and model the fluorescence response as a function of implantation dose, capturing both the initial increase at low concentrations and a saturation behavior at higher doses due to quenching mechanisms. In contrast, PC diamond membranes show a weaker dependence at low implantation fluences, consistent with pre-existing nitrogen impurities, thus making a statistical model significantly more complex. The activation yield is found to be of order of 1%, which is lower than in N-rich diamond samples, as implanted N is predominantly interstitial. Photoluminescence spectroscopy indicates that NV 0 is the dominant charge state in both materials, with a laser-power-dependent redistribution between neutral and negative charge states. Optically detected magnetic resonance (ODMR) measurements in SC bulk diamond resolve the hyperfine structure and allow extraction of the dephasing time ( T 2 ∗ ), while in PC diamond membranes, where NV centers tend do form near the grain boundaries, the ODMR signals are observed but spectral resolution is currently limited by impurities, grain-dependent NV orientations, and photoluminescence background.
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.
Abstract The diamond nitrogen-vacancy center with a negative charge (NV−) exhibits exceptional optical properties and enables highly sensitive detection of multiple physical quantities. The development of a simple and efficient method for fabricating NV− centers in diamonds holds significant importance in promoting their widespread application. The fabrication method of NV− centers is explored in this work, utilizing high-energy photons emitted by argon ions to induce vacancies in type Ia diamond substrates. The processed samples are optical characterized, and the characteristic peak and zero phonon line corresponding to the NV− center can be observed in Raman and photoluminescence spectra respectively. The concentration of NV− centers in samples could reach up to 153.9 ppb, estimated by integrating the fluorescence intensity of the photoemission spectrum. The samples exhibit the spin characterization of NV− centers, which achieve a maximum contrast of 1.5% in the optical detection magnetic resonance (ODMR) spectra.
Abstract Nitrogen vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation using a deterministic single ion source. For this we sympathetically laser-cool single N 2 + 15 molecular ions in a Paul trap and extract them at an energy of 5.9 keV. Subsequently the ions are focused with a lateral resolution of 121(35) nm and are implanted into a diamond substrate without any spatial filtering by apertures or masks. After high-temperature annealing, we detect the NV centers in a confocal microscope and determine a conversion efficiency of about 0.6%. The 15NV centers are characterized by optically detected magnetic resonance on the hyperfine transition and coherence time.