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Roughness suppression in an AC atom chip

Jean-Baptiste Trebbia, Carlos L. Garrido Alzar, Ronald Cornelussen, Christoph Ira Westbrook, Isabelle Bouchoule

Published Jan 1, 2007• 0 citations
OpenAlex

Abstract

We present a method to suppress the potential roughness of a wire-based, magnetic atom guide: modulating the wire current at a few tens of kHz, the potential roughness, which is proportional to the wire current, averages to zero. Using ultra-cold $^{87}{\\rm Rb}$ clouds, we show experimentally that modulation reduces the roughness by at least of a factor five without measurable heating or atom loss. This roughness suppression results in a dramatic reduction of the damping of center of mass oscillations.

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We present a method to suppress the roughness of the potential of a wire-based, magnetic atom guide: modulating the wire current at a few tens of kHz, the potential roughness, which is proportional to the wire current, averages to zero. Using ultracold 87Rb clouds, we show experimentally that modulation reduces the roughness by at least a factor five without measurable heating or atom loss. This roughness suppression results in a dramatic reduction of the damping of center-of-mass oscillations.

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Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom–surface interaction experiments.

arXiv:quant-ph/0703123•Journal of Modern Optics•Sep 10, 2007•6 citations
We present a method to suppress the potential roughness of a wire-based, magnetic atom guide: modulating the wire current at a few tens of kHz, the potential roughness, which is proportional to the wire current, averages to zero. Using ultra-cold 87rmRb^{87}{\\rm Rb}87rmRb clouds, we show experimentally that modulation reduces the roughness by at least of a factor five without measurable heating or atom loss. This roughness suppression results in a dramatic reduction of the damping of center of mass oscillations.
It was recently demonstrated that wire-guide roughness can be suppressed by modulating the wire currents so that the atoms experience a time-averaged potential without roughness [Trebbia et al., Phys. Rev. Lett. 98, 263201 (2007)]. In this paper, we theoretically study the limitations of this technique. At low modulation frequency, we show that the longitudinal potential modulation produces heating of the cloud, and we compute the heating rate. We also give a quantum derivation of the rough conservative potential associated with the micromotion of the atoms. At large modulation frequency, we compute the loss rate due to nonadiabatic spin flip and show that it presents resonances at multiple modulation frequencies. These studies show that the modulation technique works for a wide range of experimental parameters. We also give conditions to realize radio-frequency evaporative cooling in such a modulated trap.
Trapping and manipulating ultracold atoms through the use of atom chips offers the ability to engineer complex electromagnetic field geometries in a compact form factor. One of the primary limitations hindering their use is trap potential roughness which arises as a result of defects in the atom chip wires when atoms are brought close to the chip. This roughness can play a limiting role in atom interferometry and strong 1D confinement experiments. We present an initial experimental demonstration of atom chip potential roughness suppression using radio-frequency (RF) AC Zeeman (ACZ) potentials on an atom chip. Using ∼20 MHz RF magnetic near-fields from the chip to target intra-manifold transitions in the 87Rb ground state, we trap atoms in a spindependent ACZ potential. We compare the axial trapping potential for atoms in comparable 2-wire DC and AC Zeeman traps and show evidence of roughness suppression in the AC trap.
We present several toy models for predicting the character and strength of the roughness of ac Zeeman trapping potentials generated by imperfections in wire traces on an atom chip. An ac Zeeman trapping potential is generated by targeting a microwave or rf magnetic field at hyperfine or Zeeman ground-state transitions, respectively, while a dc Zeeman trap uses a static magnetic field to manipulate an atom via its magnetic moment. We find that an ac Zeeman trap suppresses potential roughness by several orders of magnitude with respect to a comparable dc Zeeman trap. This suppression stems from the inherent differences between an atom's response to dc and ac (namely rf and microwave) magnetic fields, in concert with how the ac skin effect smooths out a current distribution disturbed by a conductivity variation. For chip wires fabricated by evaporation, we find that an ac Zeeman trap for 87Rb^{87}\mathrm{Rb}87Rb atoms, located $100\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{m}$ from the chip and operating on a 6.8 GHz hyperfine transition, is expected to suppress potential roughness by a factor of $4\ifmmode\times\else\texttimes\fi{}{10}^{5}$ compared with a similar dc Zeeman trap. For a comparable ac Zeeman trap operating on a 10 MHz Zeeman transition, the suppression is $2\ifmmode\times\else\texttimes\fi{}{10}^{4}$. Conversely, the ac skin effect also slightly exacerbates potential roughness, in ac Zeeman traps, from defects in the sidewall of a wire trace.
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom--surface interaction experiments.
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom–surface interaction experiments.