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Applied Nanoscience

Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications

Andrii P. Shapovalov, Volodymyr E. Shaternik, Oleg G. Turutanov, Olexandr Suvorov, A. A. Kalenyuk, V. Yu. Lyakhno, Uğur Yılmaz, Pascal Febvre, V. I. Shnyrkov

Published Jan 14, 2020• 5 citations
Publisher
DOI
10.1007/s13204-020-01254-9

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We present measurements of an amplifier based on a dc superconducting quantum interference device (SQUID) with submicron Al-AlOx-Al Josephson junctions. The small junction size reduces their self-capacitance and allows for the use of relatively large resistive shunts while maintaining nonhysteretic operation. This leads to an enhancement of the SQUID transfer function compared to SQUIDs with micron-scale junctions. The device layout is modified from that of a conventional SQUID to allow for coupling signals into the amplifier with a substantial mutual inductance for a relatively short microstrip coil. Measurements at 310 mK exhibit gain of 32 dB at 1.55 GHz.
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