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NATO ASI series. Series B : Physics

The I-V Characteristic of a Resistively Shunted, Small Capacitance Josephson Junction

Vladimir Bubanja, Alec Maassen van den Brink, D. V. Averin, Gerd Schön

Published Jan 1, 1991• 1 citation
Publisher
DOI
10.1007/978-1-4899-3689-9_49

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We have measured Nb–AlOx–Nb Josephson tunnel junctions which have resistive shunts with different parasitic inductances. Numerical simulations reveal that specific features in the experimental current–voltage (I–V) characteristics of these devices are dc signatures of complex ac behavior. Depending on the inductance of the shunt loop and the capacitance of the junction, these features may either appear or disappear as the temperature of the device is increased. Examination of the simulated voltage waveforms allows us to map regions of the parameter space which exhibit complicated behavior. These regions should be avoided when a nearly sinusoidal voltage waveform is desired, as is the case for Josephson junction-based oscillators. The agreement of the experimental and simulated I–V curves also enables us to accurately determine the inductance of the shunts and the capacitance of the junctions.