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Combined quantum control of electron- and photon-system in semiconductor microcavities

M. Yamanishi, Y. Lee

Published Jan 1, 1993• 0 citations
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One of most attractive discoveries in cavity-quantum-electrodynamics in a past decade is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). Considering quantum optoelectronic device-applications, in addition to control of photon system, it is of great important to control electron system as well in order to alter spontaneous emissions. This can be easily realized, by up-date technologies, in semiconductor systems by use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this paper is to review our experimental results on physical phenomena originating from control of quantum electron- and photon-systems2), and its possible device-applications

Integrated Photonics Research•Jan 1, 1992•0 citations
One of most important conclusions in cavity-quantum-electrodynamics is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). As for quantum optoelectronic device application, in addition to quantum control of photon system, it is of great important to dynamically control electron system as well in order to alter spontaneous emissions. This can be easily realized in semiconductor systems by a combined use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this talk is to demonstrate our experimental results on physical phenomena originating from quantum control of electron-and photon-systems2)3), and its implications for device-applications4) involving the possibility of a novel scheme for the generation of photon-number squeezed state5).
We study how the interplay of weak excitation regime of quantum well confined in a semiconductor microcavity affects the dynamics of correlations and the statistical properties of photons. We discuss how the system parameters can impact the quantum entropy and Mandel’s parameter, and illustrate our concerns with numerical simulations. We have found that the enhancement of the correlations and the control of the statistical properties of photons in semiconductor microcavities for multi-photon excitation highly benefits from the combination of the strength of the field, excitonic spontaneous emission rate, cavity dissipative rate, and the coupling between the exciton and photons. Our results may have important implications not only for those specially interested in quantum optics and information, but also for the general physics community.
One of most attractive discoveries in cavity-quantum-electrodynamics in a past decade is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). Considering quantum optoelectronic device-applications, in addition to control of photon system, it is of great important to control electron system as well in order to alter spontaneous emissions. This can be easily realized, by up-date technologies, in semiconductor systems by use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this paper is to review our experimental results on physical phenomena originating from control of quantum electron- and photon-systems2), and its possible device-applications