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Integrated Photonics Research

Quantum Optoelectronics based on Combined Quantum Control of Electron- and Photon-Systems in Semiconductors

Masamichi Yamanishi, Yong Lee

Published Jan 1, 1992• 0 citations
Publisher

Abstract

One of most attractive discoveries in cavity-quantum-electrodynamics in a past decade is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). Considering quantum optoelectronic device-applications, in addition to control of photon system, it is of great important to control electron system as well in order to alter spontaneous emissions. This can be easily realized, by up-date technologies, in semiconductor systems by use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this paper is to review our experimental results on physical phenomena originating from control of quantum electron- and photon-systems2), and its possible device-applications

DOI
10.1364/ipr.1992.mc1

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One of most attractive discoveries in cavity-quantum-electrodynamics in a past decade is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). Considering quantum optoelectronic device-applications, in addition to control of photon system, it is of great important to control electron system as well in order to alter spontaneous emissions. This can be easily realized, by up-date technologies, in semiconductor systems by use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this paper is to review our experimental results on physical phenomena originating from control of quantum electron- and photon-systems2), and its possible device-applications
One of most important conclusions in cavity-quantum-electrodynamics is that spontaneous emission of an atom can be controlled by squeezing zero-point fluctuations of the photon fields surrounding the atom in both spatial and frequency domains1). As for quantum optoelectronic device application, in addition to quantum control of photon system, it is of great important to dynamically control electron system as well in order to alter spontaneous emissions. This can be easily realized in semiconductor systems by a combined use of distributed Bragg reflectors (DBRs) and the quantum confined Stark effect (QCSE) for control of photon and electron systems, respectively. The main purpose of this talk is to demonstrate our experimental results on physical phenomena originating from quantum control of electron-and photon-systems2)3), and its implications for device-applications4) involving the possibility of a novel scheme for the generation of photon-number squeezed state5).
This focused review discusses the increasing importance of quantum optics in the physics and engineering of optoelectronic components. Two influences relating to cavity quantum electrodynamics are presented. One involves the development of low threshold lasers, when the channeling of spontaneous emission into the lasing mode becomes so efficient that the concept of lasing needs revisiting. The second involves the quieting of photon statistics to produce single-photon sources for applications such as quantum information processing. An experimental platform, consisting of quantum-dot gain media inside micro- and nanocavities, is used to illustrate these influences of the quantum mechanical aspect of radiation. An overview is also given on cavity quantum electrodynamics models that may be applied to analyze experiments or design devices.
Abstract : Spontaneous emission of an atom is not an immutable property of an atom but can be controlled by modification of the vacuum field fluctuations surrounding the atom. In fact, inhibition and enhancement of spontaneous emission of atoms both at microwave and optical frequencies have been demonstrated experimentally. It has, also, been demonstrated that spontaneous emission from GaAs quantum wells (QWs) is altered by embedding the QWs between AlAs/AlGaAs distributed Bragg reflectors (DBRs). Such an artificial modification of the spontaneous emission in semiconductor micro-structures is very important, particularly from device use point of view. We may, also expect enhancement and inhibition of spontaneous emission induced by tuning of emission wavelength of atoms or active materials embedded in fixed micro-cavities, instead of variation of micro-cavity structures. In this paper, we demonstrate, for the first time, controllable enhancement and inhibition of excitonic spontaneous emission by dc electric fields applied to a GaAs QW embedded in a pair of AlAs/AlGaAs DBRs.
Though QD arrays have initially been mostly studied in an attempt to improve semiconductor lasers, much attention has been recently devoted to the revolutionary prospects opened by the unique properties of single QDs. These artificial atoms allow to mimic in solid-state systems some of the quantum optics experiments performed on atoms since the early 80’s. Recent demonstrations of coherent control experiments on QDs illustrate this fruitful analogy [10]. We will focus here our discussion on the impact of QDs on two other fields, solid-state cavity quantum electrodynamics (CQED) and the generation of quantum states of light. A single QD can be used to emit triggered single photon pulses and photon pairs, whereas its narrow emission spectrum permits to implement microcavities very efficiently to tailor its emission properties. By combining both kind of effects, it is possible to control simultaneously the number of emitted photons as well as their quantum state and to build a solid-state singlemode source of single photons (singlemode S4P) as proposed [11] and demonstrated recently by our group [12]. This novel device represents the ultimate step in a field which has been extremely active in the last 15 years, spontaneous emission (SE) control in optoelectronic devices using confined electronic and/or photonic systems [13]. Before reviewing the development of this single mode S4P, based on a single QD in a pillar microcavity, we will briefly discuss its potential applications in the field of quantum information processing and quantum communications (QIPC).
Quantum phenomena in low-dimensional electron systems have been attracting much attention of semiconductor physicists and engineers for the last few decades. However, most discussions concern either electron transport or responses to classical electromagnetic fields. On the other hand, non-classical effects of light are a subject of growing interest in quantum optics. In this case, however, electronic systems are usually limited to either atoms or effective media (which are phenomenologically described to induce photon-photon couplings). The purpose of this talk is to give a brief introduction to “fully-quantum optoelectronics,” in which electrons confined in low-dimensional semiconductors are assumed to interact with quantized electromagnetic fields.
Abstract Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take advantage of both the extensive knowledge gathered in the field of semiconductors and the unique quantum properties of superconductors. This results in novel device concepts, such as structures generating and detecting entangled photon pairs as well as novel optical gain and laser realizations. In this review, we discuss the fundamental concepts and the underlying physical phenomena of superconductor–semiconductor optoelectronics as well as practical device implementations.