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Laser Physics

Raman quantum memory based on an ensemble of silicon-vacancy centers in diamond

А. А. Калачев, A D Berezhnoi, Philip Hemmer, Olga A. Kocharovskaya

Published Sep 18, 2019• 10 citations
Publisher

Abstract

Abstract The possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond is studied. It is shown that the signal-to-noise ratio at the output of the memory can significantly exceed unity for short single-photon pulses if the number of optical centers is small enough, which can be achieved with diamond samples in optical microresonators, and level splitting in their ground state is significantly enhanced by strain.

DOI
10.1088/1555-6611/ab4049

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Abstract The possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond is studied. It is shown that the signal-to-noise ratio at the output of the memory can significantly exceed unity for short single-photon pulses if the number of optical centers is small enough, which can be achieved with diamond samples in optical microresonators, and level splitting in their ground state is significantly enhanced by strain.
Abstract Recently, the possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond has been studied (Kalachev et al 2019 Laser Phys. 29 104001). It was shown that the signal-to-noise ratio can significantly exceed unity for short single-photon input pulses if the orbital level splitting in the ground state of the color centers is significantly enhanced by strain. The latter results in decreasing the coherence time between the two available orbital branches of the ground state, though. In the present work, we consider the possibility of increasing the storage time due to the use of nanodiamonds. It is shown that suppression of direct electron-phonon transitions in the diamond nanocrystals makes it possible to increase the coherence time of both orbital and spin qubits by orders of magnitude.
Quantum memories are a key technology enabling arbitrarily-scalable optical quantum information processing architectures via active synchronisation and multiplexing of quantum information. Optically active confined impurities, called colour centres, in a spin-free and highly transparent diamond host material are promising systems to realise such devices in the solid-state, suitable for integration in a scalable guided-wave on-chip photonic platform. In this thesis, the transition from optical Raman quantum memories in atomic vapours to solid-state systems is prepared, exploring two diamond-based systems: On the basis of ensembles of neutrally charged nitrogen vacancy centres, desirable properties and criteria of solid-state systems used for optical quantum memories are developed. These include non-vanishing off-resonant Raman coupling, variable acceptance bandwidth for broadband pulses and cross-linear polarised optical transitions to prevent the generation of noise during the Raman memory protocol, which have been realised experimentally by applying external uniaxial stress to the system. However, attempts to measure the very short orbital ground state lifetime affirmed unfavourable theoretical estimations, rendering this centre unsuitable for memory applications. As a potential alternative, the negatively charged silicon vacancy centre has been investigated, which offers a large ground state splitting with extended life and coherence times and narrow inhomogeneous spectral lines due to its inversion symmetry. In an ensemble of silicon vacancy centres, the ground state lifetime is measured and coherent manipulation via resonant Ramsey interference and Hahn echo is demonstrated. In a second step, off-resonant two-photon transitions are achieved implementing stimulated Raman adiabatic passage between the orbital ground states. Finally, strong light-matter interaction of a weak signal field with the ensemble via phase-sensitive four-wave mixing is shown forming the basis for integrated Raman-based memories and single photon nonlinearities in ensembles of silicon vacancy centres and closely related defects.
The possibility of implementing an off-resonant Raman scheme of optical quantum memory on the basis of an ensemble of three-level atoms is investigated under the condition of equal polarisations of resonant transitions forming the Λ-scheme. The developed model is used to analyse the signal-to-noise ratio at the output of an optical quantum memory device in 143 Nd 3+ : Y 7 LiF 4 . It is shown that this ratio can significantly exceed unity for single-photon input pulses. The required values of the parameters can be obtained by using an impurity crystal in the form of a whispering-gallery mode ring resonator.
We demonstrate cavity-enhanced Raman emission from a single atomic defect in a solid. Our platform is a single silicon-vacancy center in diamond coupled with a monolithic diamond photonic crystal cavity. The cavity enables an unprecedented frequency tuning range of the Raman emission (100 GHz) that significantly exceeds the spectral inhomogeneity of silicon-vacancy centers in diamond nanostructures. We also show that the cavity selectively suppresses the phonon-induced spontaneous emission that degrades the efficiency of Raman photon generation. Our results pave the way towards photon-mediated many-body interactions between solid-state quantum emitters in a nanophotonic platform.
The possibility of implementation of optical quantum memory via off-resonant Raman absorption and emission of single-photon pulses in rare-earth-ion-doped crystals is theoretically analysed taking into account signal-to-noise ratio at the output of the memory device. The crystal 143Nd3+:Y7LiF4 is considered as an example. It is shown that the signal-to-noise ratio can exceed unity for single-photon input pulses provided that storage and retrieval of them is performed in the doped crystals forming a microcavity such as whispering gallery mode resonator.
We propose a scheme to realize optical quantum memories in an ensemble of nitrogen-vacancy centers in diamond that are coupled to a microcavity. The scheme is based on off-resonant Raman coupling, which allows one to circumvent optical inhomogeneous broadening and store optical photons in the electronic spin coherence. This approach promises a storage time of order 1 s and a time-bandwidth product of order 107{10}^{7}107. We include all possible optical transitions in a nine-level configuration, numerically evaluate the efficiencies, and discuss the requirements for achieving high efficiency and fidelity.