Ultrafast Electronics and Optoelectronics (UEO)
Phase Relaxation Processes of Excitons in Island- Inserted Quantum Well Structures—Suppression of Relaxation and Giant Quantum Beats
T. Matsusue, Toshiharu Saiki, Makoto Kuwata‐Gonokami, Hidefumi Akiyama, Hideaki Sakai
Abstract
Degenerate four wave mixing measurements are performed on exciton resonance in island inserted quantum wells, where AlAs islands are embedded in the center of the GaAs quantum wells. It is found that the island insertion causes strong suppression of phase relaxation of the excitons. Deep quantum beats are also observed and attributed to coherent lateral oscillations of excitons between adjacent regions with one monolayer well width difference.