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Japanese Journal of Applied Physics

Coherent Dynamics of Excitons in an Island-Inserted GaAs/AlAs Quantum Well Structure: Suppression of Phase Relaxation and a Deep Quantum Beat

T. Matsusue, Hidefumi Akiyama, Toshiharu Saiki, C. Ramkumar, Masayuki Shirane, R. Shimano, Makoto Kuwata‐Gonokami, H. Sakaki

Published May 1, 1999• 1 citation
Publisher

Abstract

The degenerate four-wave mixing technique in the self-diffraction geometry is employed to investigate a novel GaAs/AlAs quantum well microstructure. Time-integrated transient measurements are carried out to study the coherent dynamics of excitons in a GaAs quantum well with AlAs islands inserted at the center of the well (IIQW) in excitation densities from 6×109 to 1.5×1011 cm-2. The decay of the time-integrated self-diffracted signal shows slower dephasing for the IIQW compared to that of a normal quantum well (NQW) without island insertion. The dephasing rate is found to increase slightly in the IIQW, while it is found to increase sharply in the NQW with the excitation density. A deep beat with a period of 1.45 ps, which disappears for co-circular polarization configuration, is observed in the decay of the self-diffracted signal in the IIQW. The detection-energy-resolved measurement reveals that the modulation of the beat increases up to full depth at low detection energy with respect to the peak energy of the self-diffracted signal. The dependence on detection energy and on polarization configuration shows that the beat is a quantum beat due to biexcitonic effect, which is enhanced by localization due to island insertion.

DOI
10.1143/jjap.38.2735

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The degenerate four-wave mixing technique in the self-diffraction geometry is employed to investigate a novel GaAs/AlAs quantum well microstructure. Time-integrated transient measurements are carried out to study the coherent dynamics of excitons in a GaAs quantum well with AlAs islands inserted at the center of the well (IIQW) in excitation densities from 6×109 to 1.5×1011 cm-2. The decay of the time-integrated self-diffracted signal shows slower dephasing for the IIQW compared to that of a normal quantum well (NQW) without island insertion. The dephasing rate is found to increase slightly in the IIQW, while it is found to increase sharply in the NQW with the excitation density. A deep beat with a period of 1.45 ps, which disappears for co-circular polarization configuration, is observed in the decay of the self-diffracted signal in the IIQW. The detection-energy-resolved measurement reveals that the modulation of the beat increases up to full depth at low detection energy with respect to the peak energy of the self-diffracted signal. The dependence on detection energy and on polarization configuration shows that the beat is a quantum beat due to biexcitonic effect, which is enhanced by localization due to island insertion.
We have performed spectrally resolved four-wave mixing measurements on inhomogeneously broadened GaAs/AlAs quantum-well structures. Under crosslinear polarization we observed a beating structure as a function of the delay time at higher energy region of the emission band with period of 0.95 ps. The beating was constructive at delaytime τ=0 ps. This behavior results from the interference between two biexciton intermediate states with different energies coupled to a common one-exciton state, as we show by a comparison with analytical model calculation of the double Feynman diagrams of the same type.
We report time-resolved degenerate four-wave-mixing experiments on a high-quality single GaAs quantum well. The signals for parallel and cross-polarized exciting pulses show pronounced quantum beats with different frequencies corresponding to the heavy/light-hole splitting and the biexciton binding energy, respectively. Comparison of the experimental data with solutions of the optical Bloch equations for a phenomenological model system shows that these features result from strong contributions of the biexcitonic state. The importance of biexcitons to the nonlinear coherent response of the two-dimension exciton is further confirmed by the frequency dependence of the time-integrated four-wave-mixing signal amplitudes measured for the two polarization geometries.
We perform two beam time integrated (TI) degenerate four wave mixing (DFWM) measurements on 8~nm GaAs quantum wells (QW). Pulses from a Ti-Sapphire laser resonantly excite only 1s heavy hole excitons. The power density of the leading pulse (I1) is increased, keeping that of the delayed pulse fixed and relatively small. We measure the TI-DFWM signal at different delays as well as the DFWM spectra at a fixed delay, as I1 is increased. We find that the dephasing rate, after an initial increase with I1, becomes independent of I1 for large I1. The spectrally integrated DFWM signal, which probes the coherent polarization of the resonantly excited QWs, initially increases with I1, reaches a peak and then decreases as 1/(root)I1 at large I1. The results are compared with theoretical models of exciton coherence.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
We study the coherent response of an optically dense exciton system in GaAs quantum wells (QWs). For this, we resonantly excite 1s1s1s heavy-hole excitons in the QWs at 8 K with subpicosecond laser pulses. The excitonic polarization is probed using time integrated (TI) degenerate four wave mixing (DFWM) measurements in self-diffraction geometry. The average power density (I1){(I}_{1})(I1​) of the leading laser pulse is systematically increased to large values, keeping that of the delayed pulse small and fixed. The dephasing rate of the excitonic coherent polarization (determined by the rate of decrease of the TI-DFWM signal with delay between the exciting pulses) attains saturation at large I1{I}_{1}I1​ after an initial rise at small I1.{I}_{1}.I1​. In comparison, the coherent polarization (as given by the DFWM signal at a fixed delay) increases initially with I1,{I}_{1},I1​, reaches a peak and then decreases at large I1.{I}_{1}.I1​.