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Физика и техника полупроводников

Химический сдвиг и энергия обменного взаимодействия 1s состояний доноров магния в кремнии. Возможность стимулированного излучения

В.Н. Шастин, Р.Х. Жукавин, K. A. Kovalevskii, В.В. Цыпленков, Vladimir V. Rumyantsev, Dmitry V. Shengurov, Sergei G. Pavlov, В.Б. Шуман, Л.М. Порцель, Anatoly N. Lodygin, Ю.А. Астров, Nikolay V. Abrosimov, J. Michael Klopf, Heinz‐Wilhelm Hübers

Published Jan 1, 2019• 0 citations
Publisher

Abstract

AbstractThe results of experiments aimed at the observation of split 1 s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1 s ( E ), 1 s ( T _2), and 2 s ( A _1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1 s ( T _2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1 s ( T _2) and 1 s ( E ) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.

DOI
10.21883/ftp.2019.09.48135.18

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AbstractThe results of experiments aimed at the observation of split 1 s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1 s ( E ), 1 s ( T _2), and 2 s ( A _1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1 s ( T _2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1 s ( T _2) and 1 s ( E ) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.
Abstract The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.
The relaxation of ortho states of a helium-like Mg donor in silicon is investigated by measuring the modulation of background radiation transmission through impurity centers under pulsed photoexcitation. Long-lived states of the spin-triplet 1s(3T2) group with a lifetime of about 20 ms are observed. The temperature dependence indicates that the relaxation is governed by the Orbach mechanism with an activation energy ~13 meV, which is close to the exchange splitting energy of the excited 1s states of the Mg donor.
AbstractThe relaxation rates of lower excited states 1 s ( T ), 2 p _0, 2 s , 3 p _0, and 2 p _± of arsenic donors in a germanium crystal are calculated upon the interaction with long-wavelength acoustic phonons depending on the uniaxial stress in the crystallographic direction [111]. The populations of states under optical excitation are estimated for calculated times. It is shown theoretically that optical excitation of the medium forms an inverse population of arsenic donor levels and leads to the possibility of the implementation of a four-level laser scheme with the radiative transition between 2 p states and the 1 s triplet state at zero strain. The estimated value of the expected gain in the medium under optical excitation conditions by CO_2 laser radiation in the medium at a donor concentration of 2 × 10^15 cm^–3 is ~0.35 cm^–1 at a frequency of 1.98 THz if the laser transition is 2 p _± → 1 s ( T ) and 1.25 THz if the laser transition is 2 p _0 → 1 s ( T ).
A mechanism for the generation of population inversion and far-infrared emission in Si with shallow donors is investigated. By optically pumping a phosphorus doped Si crystal with a CO2 laser it was possible to achieve population inversion between the metastable 2p0 state and the 1s(E) and 1s(T) states. Spontaneous emission from these transitions was detected. Frequency measurements of this emission are in agreement with the expected transition frequency. Absorption measurements with a far-infrared probe laser confirm the existence of population inversion between the 2p0 state and the 1s(E) and 1s(T) states.
The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of $59\ensuremath{\mu}\mathrm{m}$ due to the neutral donor intracenter ${2p}_{0}\ensuremath{\rightarrow}1s(E)$ transition in Si:P pumped by CO2{\mathrm{CO}}_{2}CO2​ laser radiation is obtained. Populations of D0{D}^{0}D0 and ${D}^{\ensuremath{-}}$ center states and the balance of the radiation absorption and amplification are theoretically analyzed.