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Physical Review Letters

Stimulated Emission from Donor Transitions in Silicon

Sergei G. Pavlov, Roman Kh. Zhukavin, Ekaterina E. Orlova, V. N. Shastin, A. V. Kirsanov, Heinz‐Wilhelm Hübers, Karsten Auen, Helge P. Riemann

Published May 29, 2000• 158 citations
Publisher

Abstract

The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of $59\ensuremath{\mu}\mathrm{m}$ due to the neutral donor intracenter ${2p}_{0}\ensuremath{\rightarrow}1s(E)$ transition in Si:P pumped by ${\mathrm{CO}}_{2}$ laser radiation is obtained. Populations of ${D}^{0}$ and ${D}^{\ensuremath{-}}$ center states and the balance of the radiation absorption and amplification are theoretically analyzed.

DOI
10.1103/physrevlett.84.5220

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The first step of the hybrid excitation in the experiment was achieved by using a pulse broadband ($\\sim$200 {\\AA}) dye laser beam through a heat pipe oven. But the total covered pumping wavelength region from 4600 {\\AA} to 6800 {\\AA} the populated upper electronic state in $Na_{2}$ should be either $A^{\\prime}\\Sigma_{u}$ or $B^{\\prime}\\Pi_{u}$ state. The excited sodium dimers $Na_{2}^{\\ast}$ transfered their energy to sodium atoms Na by near resonace collisions and the Na then would populate up the 3P level from ground state 3s. The Na were consequentely pumped up to 4D, 5D, 5S or 6S level from 3P by using a narrowband dye laser pumped by the same $N_{2}$ laser. The infrared stimulated radiation corresponding to the transitions of 4D-4P(2.34 $\\mu$m). 5D-4P(5.02$\\mu$m), 5S-4P(3.42 $\\mu$m) and 6S-5P(7.52 $\\mu$m) with cascade stimulated emission from 4P to 4S (2.20 $\\mu$m) and from 5P to 5S (5.43 $\\mu$m) were then obtained, Furthermore the dependence of the output energy on the pumping wavelengthes was measured and discussed.

•Jan 1, 1985•0 citations
The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59\ensuremathμm59\ensuremath{\mu}\mathrm{m}59\ensuremathμm due to the neutral donor intracenter 2p0\ensuremath→1s(E){2p}_{0}\ensuremath{\rightarrow}1s(E)2p0​\ensuremath→1s(E) transition in Si:P pumped by CO2{\mathrm{CO}}_{2}CO2​ laser radiation is obtained. Populations of D0{D}^{0}D0 and D\ensuremath−{D}^{\ensuremath{-}}D\ensuremath− center states and the balance of the radiation absorption and amplification are theoretically analyzed.
A mechanism for the generation of population inversion and far-infrared emission in Si with shallow donors is investigated. By optically pumping a phosphorus doped Si crystal with a CO2 laser it was possible to achieve population inversion between the metastable 2p0 state and the 1s(E) and 1s(T) states. Spontaneous emission from these transitions was detected. Frequency measurements of this emission are in agreement with the expected transition frequency. Absorption measurements with a far-infrared probe laser confirm the existence of population inversion between the 2p0 state and the 1s(E) and 1s(T) states.
Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p0 state in Si:Bi with optical phonons. The other one is based on the suppression of acoustic-phonon-assisted relaxation from the 2p0 state in Si:P due to the momentum conservation law. Spontaneous emission was registered from shallow donors in Si:P under photoionization by a CO2 laser. The dependence of the spontaneous emission intensity on the intensity of pumping radiation confirms the possibility of amplification on impurity transitions.
Abstract The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.
We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (Si∶Bi).The medium utilizes three electronic levels: ground state [j1i: 1sðA 1 Þ in Si∶Bi], upper [j3i: 2p Æ ] and lower [j2i: 1sðEÞ] laser levels.The j1i ↔ j3i and j2i ↔ j3i transitions are optically allowed and the j1i ↔ j2i transition is Raman active.Lasing based on population inversion occurs between the states j3i and j2i, while Raman scattering benefits from the Raman-active transition.At high pump power the inversion-based stimulated emission j3i → j2i disappears, because electronic scattering from j1i to j2i via a virtual state dominates and the electrons are excited into j2i rather than into j3i.Starting as population inversion-based lasing, it ends as stimulated Raman scattering.Our model shows that such a competition occurs on the timescale of the 10-ps-long pump pulse.
STIMULATED EMISSION BASED ON TWO-STEP HYBRID RESONANCE A1Σu+A^{1}\Sigma_{u}^{+}A1Σu+​ OR B1ΠuB^{1}\Pi_{u}B1Πu​ STATE OF Na.∗Na.^{*}Na.∗
The first step of the hybrid excitation in the experiment was achieved by using a pulse broadband ($\\sim$200 {\\AA}) dye laser beam through a heat pipe oven. But the total covered pumping wavelength region from 4600 {\\AA} to 6800 {\\AA} the populated upper electronic state in Na2Na_{2}Na2​ should be either AprimeSigmauA^{\\prime}\\Sigma_{u}AprimeSigmau​ or BprimePiuB^{\\prime}\\Pi_{u}BprimePiu​ state. The excited sodium dimers Na2astNa_{2}^{\\ast}Na2ast​ transfered their energy to sodium atoms Na by near resonace collisions and the Na then would populate up the 3P level from ground state 3s. The Na were consequentely pumped up to 4D, 5D, 5S or 6S level from 3P by using a narrowband dye laser pumped by the same N2N_{2}N2​ laser. The infrared stimulated radiation corresponding to the transitions of 4D-4P(2.34 mu\\mumum). 5D-4P(5.02mu\\mumum), 5S-4P(3.42 mu\\mumum) and 6S-5P(7.52 mu\\mumum) with cascade stimulated emission from 4P to 4S (2.20 mu\\mumum) and from 5P to 5S (5.43 mu\\mumum) were then obtained, Furthermore the dependence of the output energy on the pumping wavelengthes was measured and discussed.