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IEICE Technical Report; IEICE Tech. Rep.

High-Precision Differential Side-channel Analysis Using Band-Pass Filter

Toru Hisakado, Noritaka Yamashita, Tomoyasu Suzaki, Yukiyasu Tsunoo, Shouji Takahiko, Akira Nozawa, Takayuki Kimura

Published Feb 22, 2008• 0 citations
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High-fidelity readout with strong Purcell protection of qubit coherence is essential for scalable superconducting quantum processors, yet the finite passband and sizable footprint of conventional band-pass Purcell filters make them hard to scale. Here we introduce a scalable edge-pass Purcell filter that separates the readout band from the protected qubit band by a single transmission edge, freeing the readout resonators from bandwidth constraint. Depending on whether the transmitting band lies above or below the cutoff, the compact network is realized as a high-pass filter (HPF) or a low-pass filter (LPF). The HPF reaches an average readout fidelity of 99.46(4)% (up to 99.56%) with a 150-ns pulse, and the LPF reaches 99.49(3)% (up to 99.57%) with a 130-ns pulse. The average single-qubit gate fidelities are 99.94% (HPF) and 99.93% (LPF). Relative to the filter-free Purcell limit, the filters substantially extend the qubit lifetime, and the Purcell protection deepens at higher filter order. In addition, an intrinsic dissipation mode of the filter offers a qubit-reset channel. This leads to a compact architecture that unifies fast, high-fidelity readout, Purcell protection, and effective reset within a single filter for large-scale fault-tolerant quantum computation.
In this paper, we present a compact quint-band superconducting filter operating at 2.4, 3.5, 4.7, 5.3, and 5.9 GHz. Matching junctions with different impedance branch lines are used to connect a dual-band sub-filter with a tri-band sub-filter and to reduce the channel interactions. The quint-band filter design is divided into two sections to determine the controllable frequencies and bandwidths, while ensuring compact size and reducing design complexity. The filter is fabricated on double-sided YBCO film deposited on an MgO substrate with a size of 26 mm × 19 mm. The measured results match well with the simulations.
We have fabricated both NbN/Ta x N/NbN SN*S-type, NbN/MgO/NbN SIS-type Josephson junctions and microwave band-pass filters on different substrates (Si, Sapphire, MgO). NbN films have been deposited on both sides of (100) oriented, 250 µm thick, MgO substrates with a high crystalline texture quality. The aim was to investigate the performances and the maximum achievable operating frequency in an NbN based RSFQ modulator front-end of an ADC in the 4 K-10 K temperature range. We observed that Ta x N thin films can be tuned from an insulating phase to a superconducting phase (Tc ∼4K) by varying the nitrogen content during sputter deposition while the barrier height of MgO can also be controlled by deposition conditions and by tri-layer postdeposition annealing. Junction properties (Jc∼10-25 kA/cm 2 ), Mac Cumber parameter and RnIc product measured up to 1 mV are shown to be controlled by the reactive sputtering conditions. We have designed three pole band-pass filters and resonators in a micro-strip configuration and studied the junction coupling with the filters. We will show that a sigma-delta NbN technology is a suitable solution for analogue-to-digital conversion in the future generations of telecommunication satellites to achieve high sampling frequency and large bandwidth at high carrier frequency signal.