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Physica E Low-dimensional Systems and Nanostructures

Charge qubits and limitations of electrostatic quantum gates

Andreas Weichselbaum, Sergio E. Ulloa

Published Dec 15, 2004• 0 citations
Publisher
DOI
10.1016/j.physe.2004.08.105

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We investigate the characteristics of purely electrostatic interactions with external gates in constructing full single-qubit manipulations. The quantum bit is naturally encoded in the spatial wave function of the electron system. Single-electron transistor arrays based on quantum dots or insulating interfaces typically allow for electrostatic controls where the interisland tunneling is considered constant, e.g., determined by the thickness of an insulating layer. A representative array of $3\ifmmode\times\else\texttimes\fi{}3$ quantum dots with two mobile electrons is analyzed using a Hubbard Hamiltonian and a capacitance matrix formalism. Our study shows that it is easy to realize the first quantum gate for single-qubit operations, but that a second quantum gate comes only at the cost of compromising the low-energy two-level system that encodes the qubit. We use perturbative arguments and the Feshbach formalism to show that this compromising of the two-level system is a rather general feature for electrostatically interacting qubits and is not just related to the specific details of the system chosen. We show further that full implementation requires tunable tunneling or external magnetic fields.
Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology.Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to highimpedance superconducting quantum interference device array and Josephson-junction array resonators.We tune the strength of the electric-dipole interaction between the qubit and the resonator in situ using surface gates.We characterize the qubit-resonator coupling strength, the qubit decoherence, and the detuning noise affecting the charge qubit for different electrostatic DQD configurations.We find all quantities to be systematically tunable over more than one order of magnitude, resulting in reproducible decoherence rates Γ 2 =2π < 5 MHz in the limit of high interdot capacitance.In the opposite limit, by reducing the interdot capacitance, we increase the DQD electric-dipole strength and, therefore, its coupling to the resonator.Employing a Josephson-junction array resonator with an impedance of approximately 4 kΩ and a resonance frequency of ω r =2π ∼ 5.6 GHz, we observe a coupling strength of g=2π ∼ 630 MHz, demonstrating the possibility to operate electrons hosted in a semiconductor DQD in the ultrastrong-coupling regime (USC).The presented results are essential for further increasing the coherence of quantum-dot-based qubits and investigating USC physics in semiconducting QDs.
We propose and investigate a novel method for the controlled coupling of two Josephson charge qubits by means of a variable electrostatic transformer. The value of the coupling capacitance is given by the discretized curvature of the lowest energy band of a Josephson junction, which can be positive, negative, or zero. We calculate the charging diagram of the two-qubit system that reflects the transition from positive to negative through vanishing coupling. We also discuss how to implement a phase gate making use of the controllable coupling.