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OSA Advanced Photonics Congress

Optimized Quantum Photonics

Jelena Vuckovic A

Published Jan 1, 2019• 0 citations
Publisher

Abstract

We present our recent progress on developing high quality qubits based on color centers in diamond and silicon carbide, combined with powerful optimized photonic structures providing efficient optical interfaces and interconnects.
DOI
10.1364/sppcom.2019.qtw2e.1

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At the core of most quantum technologies is the development of homogeneous, long lived qubits with excellent optical interfaces, and the development of high efficiency and robust optical interconnects for such qubits. To overcome inhomogeneities in semiconductor spin qubits and in their connections, we have been relying on fast photonics inverse design and on optimization of the qubits themselves. We illustrate this approach to scalable semiconductor quantum systems with our results on quantum photonics based on diamond and silicon carbide.
At the core of most quantum technologies, including quantum networks and quantum simulators, is the development of homogeneous, long lived qubits with excellent optical interfaces, and the development of high efficiency and robust optical interconnects for such qubits. To achieve this goal, we have been studying color centers in diamond (SiV, SnV) and silicon carbide (VSi in 4H SiC), in combination with novel fabrication techniques, and relying on the powerful and fast photonics inverse design approach that we have developed. Our inverse design approach offers a powerful tool to implement classical and quantum photonic circuits with superior properties, including robustness to errors in fabrication and temperature, compact footprints, novel functionalities, and high efficiencies. We illustrate this with a number of demonstrated devices in silicon, diamond, and silicon carbide.