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Optical Fiber Communication Conference

Quantum Technologies With Semiconductor Color Centers in Integrated Photonics

Jelena Vuckovic A

Published Jan 1, 2025• 0 citations
Publisher

Abstract

Optically interfaced spin qubits based on diamond and silicon carbide color centers are considered promising candidates for scalable quantum networks and sensors. However, they can also be used to build chip-scale quantum many body systems with tunable all to all interactions between qubits enabled by photonics - useful for quantum simulation and possibly computing. Full-text article not available; see video presentation

DOI
10.1364/ofc.2025.m2a.1

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Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.
At the core of most quantum technologies, including quantum networks and quantum simulators, is the development of homogeneous, long lived qubits with excellent optical interfaces, and the development of high efficiency and robust optical interconnects for such qubits. To achieve this goal, we have been studying color centers in diamond (SiV, SnV) and silicon carbide (VSi in 4H SiC), in combination with novel fabrication techniques, and relying on the powerful and fast photonics inverse design approach that we have developed. Our inverse design approach offers a powerful tool to implement classical and quantum photonic circuits with superior properties, including robustness to errors in fabrication and temperature, compact footprints, novel functionalities, and high efficiencies. We illustrate this with a number of demonstrated devices in silicon, diamond, and silicon carbide.