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Optics Letters

Laser-induced heating in a high-density ensemble of nitrogen-vacancy centers in diamond and its effects on quantum sensing

Dewen Duan, Vinaya K. Kavatamane, Sri Ranjini Arumugam, Ganesh K. Rahane, Guanxiang Du, Yan‐Kai Tzeng, Huan‐Cheng Chang, Gopalakrishnan Balasubramanian

Published May 24, 2019• 18 citations
Publisher

Abstract

Among quantum sensors, the single nitrogen-vacancy (NV) defect in diamond has the highest sensitivity-to-size factor. For instance, a single-NV spin when used as a magnetometer could achieve sensitivities of the order of nT/Hz, while the dimensions of the sensor are merely atomic in size. The sensitivity is limited only by the photon shot noise. One method to boost the magnetometer sensitivity to pico-tesla scales is to use many NV defect centers as an ensemble sensor [Phys. Rev. X5, 041001 (2015)PRXHAE2160-330810.1103/PhysRevX.5.041001]. However, during the absorption-emission (fluorescence) optical cycles, the NV centers transfer a portion of the irradiation laser energy into phonons and heat the diamond matrix. This results in unintended fluorescence decrease, spin resonance lines shifts, and fluctuations. Hence, the advantages gained by packing a high density of NV centers are significantly reduced. Here we investigate the heat generation of ensemble NV centers in micrometer-sized diamond under 532 nm laser irradiation and its effects pertaining to sensing applications. These investigations help us to find strategies that mitigate the detrimental effects of heating and yet permits the use of ensemble NV defects for improved metrology applications.

DOI
10.1364/ol.44.002851

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Among quantum sensors, the single nitrogen-vacancy (NV) defect in diamond has the highest sensitivity-to-size factor. For instance, a single-NV spin when used as a magnetometer could achieve sensitivities of the order of nT/Hz, while the dimensions of the sensor are merely atomic in size. The sensitivity is limited only by the photon shot noise. One method to boost the magnetometer sensitivity to pico-tesla scales is to use many NV defect centers as an ensemble sensor [Phys. Rev. X5, 041001 (2015)PRXHAE2160-330810.1103/PhysRevX.5.041001]. However, during the absorption-emission (fluorescence) optical cycles, the NV centers transfer a portion of the irradiation laser energy into phonons and heat the diamond matrix. This results in unintended fluorescence decrease, spin resonance lines shifts, and fluctuations. Hence, the advantages gained by packing a high density of NV centers are significantly reduced. Here we investigate the heat generation of ensemble NV centers in micrometer-sized diamond under 532 nm laser irradiation and its effects pertaining to sensing applications. These investigations help us to find strategies that mitigate the detrimental effects of heating and yet permits the use of ensemble NV defects for improved metrology applications.
Nitrogen Vacancy (NV) centers are point defects in diamond that allow magnetic field sensing based on Optically Detected Magnetic Resonance (ODMR). They are processed in ultrapure single-domain CVD grown diamond crystals and can be operated at room temperature. This results in solid-state sensors with a wide variety of applications. Ensemble of NV centers can be used to perform wide-field magnetic imaging with sensitivity in the nT range. Single NV centers can also be processed, which allows sensing at the atomic scale. This possibility, combined with its unique coherence properties, make NV center an ideal candidate for quantum sensing.
High-density nitrogen-vacancy (NV) centers exceeding 1016/cm3 inside a diamond can be achieved by femtosecond laser irradiation. The number of pulses and pulse energy were adjusted considering the increasing trend of the NV concentration and damage generation. The NV concentration first grew as the number of laser pulses was increased, and then the concentration was temporarily saturated or decreased. By increasing the number of laser pulses more than 2.5–5 × 107, the concentration increased again. The Hahn-echo measurement revealed that electron spins of the substitutional nitrogen center (P1) were dominant source for decoherence and the number of paramagnetic defects induced by the laser irradiation was not significant for degradation of spin coherence of the laser-induced NV centers even without a post-annealing process. Such high-dense ensemble NV centers are crucial for a high-sensitive quantum sensor.
NV- center has been paid attention as a quantum sensor for highly sensitive detection of magnetic field, electric field, temperature and strain, etc.. Electron beam irradiation followed by subsequent thermal annealing is known as the effective procedures to create NV- center in diamond. The electron irradiation generates vacancies in diamond and the annealing enables vacancies to diffuse in the lattice. Then diffused vacancies are captured by nitrogen atoms, and as a result, NV centers are created. In addition, substitutional nitrogen atom at a lattice site (P1 center) also acts as a donor for NV center, the charge state of NV centers changes from neutral (NV0) to NV-. Creation high concentration of ensemble NV- centers is needed to achieve high sensitively sensing. The magnetic sensitivity is proportional to the reciprocal of the number of NV centers and T2 (spin coherence time), i.e., high concentration NV- centers with long T2 increase the sensitivity. P1 center has an important role for being a component of NV- centers and acting as donor to the NV center. But it also plays a role as decoherence source (decrease in magnetic field sensitivity). Therefore, it is important to create high concentration of NV- centers considering the amount of P1 centers. In current study, we investigate irradiation fluence dependence of the creation behavior of NV centers in type-Ib diamonds by using electron spin resonance (ESR) and photo-luminescence (PL) to understand the creation mechanism of NV- center. The values of T2 are also evaluated by Hahn-echo measurement, since it is one of the key parameters for highly sensitive magnetometry. Then, we discuss the creation mechanism of NV centers based on concentrations of defects.
The nitrogen-vacancy (NV) centre in diamond is a perfect candidate for quantum sensing applications applied to numerous fields of science. Past studies improved the sensitivity of diamonds containing NV centres by increasing their density or prolonging their coherence time. However, few studies discussed the effects of other defects inside the diamond crystal on the sensitivity of the NV centres. In this study, we demonstrated the implication of single substitutional nitrogen defects on the fluorescence emission, charge state stability, coherence time and sensitivity of the NV centres. We found that there is an optimal concentration of nitrogen defects that allows diamond samples to have a high-density of NV centres and high fluorescence without significantly affecting the coherence time. This results will inform the correct choice of diamond characteristics for current and future quantum sensing applications with the NV centres.
The nitrogen-vacancy (NV) centre in diamond is a perfect candidate for quantum sensing applications applied to numerous fields of science. Past studies improved the sensitivity of diamonds containing NV centres by increasing their density or prolonging their coherence time. However, few studies discussed the effects of other defects inside the diamond crystal on the sensitivity of the NV centres. In this study, we demonstrated the implication of single substitutional nitrogen defects on the fluorescence emission, charge state stability, coherence time and sensitivity of the NV centres. We found that there is an optimal concentration of nitrogen defects that allows diamond samples to have a high-density of NV centres and high fluorescence without significantly affecting the coherence time. This results will inform the correct choice of diamond characteristics for current and future quantum sensing applications with the NV centres.
When the word diamond comes up, the majority of people thinks about engagement rings or gemstones. In fact, it is additionally, one of the most promising host materials for the implementation of advanced technology, exploiting the nature of quantum physics. Such quantum technologies have disruptive potential, ones the quantum effects can be applied in macroscopic, commercial products. The nitrogen-vacancy (NV) centre in diamond is a promising candidate to perform such tasks in the fields of quantum computation, quantum cryptography or metrology. Especially in the field of quantum sensing, the NV sensor impresses with nano-scale spatial resolution paired with high sensitivity. The electronic spin of the atomic-sized point defect can be initialised, manipulated and read-out at ambient conditions and coherence lifetimes are comparably long. Diamond magnetometers based on negatively charged NV centres have shown to be very attractive, and the sensitivity goes down to the single-atom level. In order to exploit such a high sensitivity level for sensing prospects, in this thesis, the NV centres are fabricated well confined in a certain distance to the diamond surface, since the detectable field usually decays with the third power of the distance between sensor and target. The surface depicts a fracture of the spin wise protecting diamond lattice and charge fluctuations affect the stability of NV centres, which are overcome by diamond surface termination. In order to improve the sensitivity further, the sensor density, measurement contrast and interaction time are increased. The nitrogen doping technique, which is applied during a plasma-enhanced chemical vapour deposition (PECVD) diamond growth process is used to fabricate NV centre ensembles aligned along one diamond crystal axis, thereby improving the measurement contrast by a factor up to four. The interaction time limiting spin bath is analysed using the sensor capabilities of the NVs, which leads to enhanced growth strategies and the fabrication of sensitivity optimised NV centre ensembles for magnetometry applications.