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Quantum Optics with Tin-Vacancy Emitters in Diamond

Matthew E. Trusheim, Benjamin Pingault, Noel Wan, Mustafa Gündoğan, Lorenzo De Santis, Kevin C. Chen, Mete Atatüre, Dirk Englund

Published May 5, 2019• 1 citation
Publisher

Abstract

We investigate the quantum optical properties of single tin-vacancy emitters in diamond through resonant magneto-optical spectroscopy at 4 K. We find radiative lifetime-limited optical transitions associated with long-lived spin states. © 2019 The Author(s)
DOI
10.23919/cleo.2019.8749267

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Solid-state quantum emitters that couple coherent optical transitions to long-lived spin states are essential for quantum networks. Here we report on the spin and optical properties of single tin-vacancy (SnV) centers in diamond nanostructures. Through magneto-optical spectroscopy at 4 K, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, and measure electron spin lifetimes. We find that the optical transitions are consistent with the radiative lifetime limit and that the spin lifetimes are longer than for other inversion-symmetric color centers under similar conditions. These properties indicate that the SnV is a promising candidate for quantum optics and quantum networking applications.
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10 ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
Quantum emitters in diamond are a promising candidate for quantum network applications. Here, we show basic properties of tin-vacancy (SnV) centers in diamond, which we recently discovered. The SnV center shows a sharp zero phonon line and a high fluorescence intensity. The SnV center has a possibility to have a long spin coherence time in the Kelvin temperature range, in contrast to other group-IV color centers, i.e. silicon-vacancy and germanium-vacancy centers. We discuss important experiments regarding spin and optical properties of the SnV quantum emitter for further development towards quantum network.
Tin-vacancy ($\mathrm{Sn}\text{\ensuremath{-}}V$) color centers were created in diamond via ion implantation and subsequent high-temperature annealing up to $2100\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ at 7.7 GPa. The first-principles calculation suggested that a large atom of tin can be incorporated into a diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The $\mathrm{Sn}\text{\ensuremath{-}}V$ center showed a sharp zero phonon line at 619 nm at room temperature. This line split into four peaks at cryogenic temperatures, with a larger ground state splitting ($\ensuremath{\sim}850\text{ }\text{ }\mathrm{GHz}$) than that of color centers based on other group-IV elements, i.e., silicon-vacancy ($\mathrm{Si}\text{\ensuremath{-}}V$) and germanium-vacancy ($\mathrm{Ge}\text{\ensuremath{-}}V$) centers. The excited state lifetime was estimated, via Hanbury Brown--Twiss interferometry measurements on single $\mathrm{Sn}\text{\ensuremath{-}}V$ quantum emitters, to be $\ensuremath{\sim}5\text{ }\text{ }\mathrm{ns}$. The order of the experimentally obtained optical transition energies, compared with those of $\mathrm{Si}\text{\ensuremath{-}}V$ and $\mathrm{Ge}\text{\ensuremath{-}}V$ centers, was in good agreement with the theoretical calculations.