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Bulletin of the American Physical Society

Towards Optical Frequency Standard based on Lutetium Ion

Ting Rei Tan, R. Kaewuam, K. J. Arnold, Jaren Gan, Gleb Maslennikov, Ko-Wei Tseng, Dzmitry Matsukevich, M. D. Barrett

Published May 30, 2019• 0 citations
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All-Optical NAND Logic Gate Operating at 1.53 µ m in Erbium Lutetium Aluminum Garnets

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An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.

International Conference on Photonics in Switching•Jan 1, 2000•0 citations
An all-optical NAND logic gate derived from the negative nonlinear absorption effect was demonstrated in erbium-lutetium aluminum garnet crystals using “1532 nm laser diode. With a decreasing incident modulation degree, a reversed-phase waveform was obtained in the transmitted laser at modulation degrees smaller than 90% for sample lengths greater than 1.0 mm. The reversed-phase transmitted waveforms were observed at modulation frequencies from 100 kHz to 1 GHz. The negative nonlinear absorption effect can be explained by Considering an enhanced absorption model for a four-level system of the Er3+ ion.