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Conference on Lasers and Electro-Optics

Integration of Quantum Emitters with Lithium Niobate Photonics

Shahriar Aghaeimeibodi, Boris Desiatov, Je‐Hyung Kim, Chang-Min Lee, Mustafa Atabey Buyukkaya, Aziz Karasahin, Christopher J. K. Richardson, Richard P. Leavitt, Marko Lončar, Edo Waks A

Published May 5, 2019• 0 citations
Publisher

Abstract

We demonstrate integration of telecom quantum dots with lithium niobate photonics using a pick-and-place technique. Second order photon correlation measurement performed with an on-chip beamsplitter confirms the single-photon nature of the emission.
DOI
10.23919/cleo.2019.8749729

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The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobate lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and-place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.
Efficient generation and control of quantum light on a chip is very important to achieve scalable quantum photonic systems. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms, therefore, enable us to utilize the advantages of both systems and make feasible integrated quantum photonic devices. We demonstrate hybrid integration of solid-state quantum dots to a silicon photonic device by using a pick-and-place technique and perform Hanbury-Brown and Twiss experiments on the silicon chip with integrated quantum emitters.
The well-established silicon-on-insulator platform is very promising for large-scale integrated photonic and quantum photonic technologies due to the mature manufacturing technology and integration density. Here, we present an efficient and stable fiber-to-chip coupling, which enables the injection of single photons from telecom quantum dots into a silicon-on-insulator photonic chip. Two additional fibers further couple the chip to single-photon detectors. The approach chosen to achieve steady fiber-chip coupling is based on the use of grating couplers steadily packaged with angled single-mode fibers. Using this technique, coupling efficiencies between the fiber and the SOI chip as high as 69.1% per grating coupler (including the taper losses) are reached. The effective interface between the quantum light generated by quantum dots and the silicon components is verified via the measurement of the second-order correlation function using a Hanbury–Brown and Twiss setup. With g(2)(0)=0.051±0.001, it clearly proves the single-photon nature of the injected QD photons. This demonstrates the reliability of the interfacing method and opens the route to employ telecom quantum dots as non-classical light sources with high complexity silicon photonic functionalities.
Quantum technologies have surpassed classical systems by leveraging the unique properties of superposition and entanglement in photons and matter. Recent advancements in integrated quantum photonics, especially in silicon-based and lithium niobate platforms, are pushing the technology toward greater scalability and functionality. Silicon circuits have progressed from centimeter-scale, dual-photon systems to millimeter-scale, high-density devices that integrate thousands of components, enabling sophisticated programmable manipulation of multi-photon states. Meanwhile, lithium niobate, thanks to its wide optical transmission window, outstanding nonlinear and electro-optic coefficients, and chemical stability, has emerged as an optimal substrate for fully integrated photonic quantum chips. Devices made from this material exhibit high efficiency in in generating, manipulating, converting, storing, and detecting photon states, thereby establishing a basis for deterministic multi-photon generation and single-photon quantum interactions, as well as comprehensive frequency-state control. This review explores the development of integrated photonic quantum technologies based on both silicon and lithium niobate, highlighting invaluable insights gained from silicon-based systems that can assist the scaling of lithium niobate technologies. It examines the functional integration mechanisms of lithium niobate in electro-optic tuning and nonlinear energy conversion, showcasing its transformative impact throughout the photonic quantum computing process. Looking ahead, we speculate on the developmental pathways for lithium niobate platforms and their potential to revolutionize areas such as quantum communication, complex system simulation, quantum sampling, and optical quantum computing paradigms.
Photonics has emerged as one of the leading platforms for the implementation of real-world-applicable quantum technologies, enabling secure communication, enhanced sensing capabilities, as well as resolving previously intractable computational challenges. However, to harness the full potential of the photonics platform, several engineering feats need to be accomplished; among those is the quest for a scalable source of pure single photons. While single photon sources can be implemented in a variety of different ways, integrated lithium niobate stands out as a prime contender for a monolithic quantum photonics platform, given its second-order nonlinearity and proven classical scalability. Despite the extensive effort put into developing the platform, integrating suitable photon pair sources remains a hurdle limiting the scalability of quantum photonic systems in lithium niobate. We engineer three-wave-mixing in a nanophotonic lithium niobate device, integrating multiple near-perfect spectrally separable heralded single photon sources. By mixing photons generated via the developed sources, we show bosonic interference between indistinguishable photons—a crucial interaction for many photonic quantum computing protocols. This demonstration of proof-of-principle heralded multi-source interference in integrated lithium niobate contributes towards a scalable quantum photonics platform.