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Bulletin of the American Physical Society

Characterization of epitaxially grown Er doped Y2O3 for quantum optics applications

Manish Kumar Singh, Khan Alam, Tijana Rajh, Tian Zhong, Supratik Guha

Published Mar 6, 2019• 0 citations
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Dual rare-earth qubits and correlated long-lived coherence in epitaxial thin-film crystals

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We report dual er qubits in two distinct symmetry sites of an epitaxially grown single crystal Y2O3 thin film. Coupling of Er spins to a superconducting microwave resonator and a fiber micro-cavity enables simultaneous optical-spin coherence spectroscopy at millikelvin temperature. At optimal field orientations, over millisecond spin coherence times are observed for Er qubits in both C2 and C3i symmetry sites. Single Er ions in both C2 and C3i sites are addressed optically, respectively at the field configuration where their millisecond spin coherence times are measured. By correlating the spin spectral diffusion and optical dephasing rate of C3i Er qubits, we report a magnetic noise limited spin-optical dephasing rate of only 2.6 kHz, demonstrating significant prospect of Er in epitaxial Y2O3 thin film as a highly coherent spin-photon interface for quantum network.

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The obtention of quantum-grade rare-earth doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, Chemical Vapour Deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.

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The obtention of quantum-grade rare-earth-doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, chemical vapor deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz, or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.

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Spectroscopic study of Yb doped oxide crystals for intrinsic optical bistability

Mikhail A. Noginov, G. B. Loutts, C. Steward +5 more

Journal of Luminescence•Mar 1, 2002•50 citations
We report dual er qubits in two distinct symmetry sites of an epitaxially grown single crystal Y2O3 thin film. Coupling of Er spins to a superconducting microwave resonator and a fiber micro-cavity enables simultaneous optical-spin coherence spectroscopy at millikelvin temperature. At optimal field orientations, over millisecond spin coherence times are observed for Er qubits in both C2 and C3i symmetry sites. Single Er ions in both C2 and C3i sites are addressed optically, respectively at the field configuration where their millisecond spin coherence times are measured. By correlating the spin spectral diffusion and optical dephasing rate of C3i Er qubits, we report a magnetic noise limited spin-optical dephasing rate of only 2.6 kHz, demonstrating significant prospect of Er in epitaxial Y2O3 thin film as a highly coherent spin-photon interface for quantum network.
The obtention of quantum-grade rare-earth doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, Chemical Vapour Deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.
The obtention of quantum-grade rare-earth-doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of scalable quantum devices. Among the different growth methods, chemical vapor deposition (CVD) offers high flexibility and has demonstrated the ability to produce oxide films hosting rare-earth ions with narrow linewidths. However, growing epitaxial films directly on silicon is challenging by CVD due to a native amorphous oxide layer formation at the interface. In this manuscript, we investigate the CVD growth of erbium-doped yttrium oxide (Er:Y2O3) thin films on different substrates, including silicon, sapphire, quartz, or yttria stabilized zirconia (YSZ). Alternatively, growth was also attempted on an epitaxial Y2O3 template layer on Si (111) prepared by molecular beam epitaxy (MBE) in order to circumvent the issue of the amorphous interlayer. We found that the substrate impacts the film morphology and the crystalline orientations, with different textures observed for the CVD film on the MBE-oxide/Si template (111) and epitaxial growth on YSZ (001). In terms of optical properties, Er3+ ions exhibit visible and IR emission features that are comparable for all samples, indicating a high-quality local crystalline environment regardless of the substrate. Our approach opens interesting prospects to integrate such films into scalable devices for optical quantum technologies.