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Bulletin of the American Physical Society

Spectroscopy of Erbium-167 doped yttrium orthosilicate for quantum photonic technologies

Mi Lei, Ioana Craiciu, Jake Rochman, Jonathan M. Kindem, John G. Bartholomew, Andrei Faraon

Published Mar 7, 2019• 0 citations
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Optics Express•Feb 3, 2017•35 citations
Spin echoes in the ground and an optically excited state of 167^{167}167Er3+^{3+}3+:Y2_22​SiO5_55​ at near-zero magnetic fields using Raman heterodyne spectroscopy
Erbium-167-doped yttrium orthosilicate is an ideal candidate for a microwave-addressed quantum memory due to its telecom wavelength optical transition and hyperfine structure with and without an applied magnetic field. However, to date there has been little investigation in coherence times for transitions around zero magnetic field, or for hyperfine structure other than from the ground state. Through the use of Raman heterodyne spectroscopy, we have identified transitions at zero magnetic field with a small dependence on field that are suitable for detecting spin echoes for both the ground and excited state. We measured coherence times of transitions at 879.4 MHz and 896.7 MHz as 370 μ\muμs and 1.4 ms respectively at 3.2 K. This is a 100-fold increase in coherence time compared to previous measurements at the same dopant concentration and 200 times greater than the even isotopes of erbium-doped yttrium orthosilicate previously used to demonstrate a microwave memory.
A scalable platform for on-chip optical quantum networks will rely on standard top-down nanofabrication techniques and solid-state emitters with long coherence times. We present a new hybrid platform that integrates amorphous silicon photonic waveguides and microresonators fabricated on top of a yttrium orthosilicate substrate doped with erbium ions. The quality factor of one such resonator was measured to exceed 100,000 and the ensemble cooperativity was measured to be 0.54. The resonator-coupled ions exhibited spontaneous emission rate enhancement and increased coupling to the input field, as required for further development of on-chip quantum light-matter interfaces.