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Physics Letters A

Dynamical switching and memory via incoherent pump assisted optical bistability

Yanan Li, Yu-Yuan Chen, Ren-Gang Wan, Hong-Wei Yan

Published Apr 29, 2019• 25 citations
Publisher
DOI
10.1016/j.physleta.2019.04.045

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A compact design for semiconductor cavities including coupled AlGaN/AlGaAs quantum wells is proposed for all-optical switching of the bistability process. First, physical and geometrical parameters are optimized to engineer the conducting electrons' energy levels in the quantum wells. Then, finite element simulations based on Schrödinger equations are executed to estimate the states of the charge carriers for AlGaN/AlGaAs as the active region. Next, the optical coupling and pumping fields are applied to the active region to both initiate the bistability and facilitate its real-time control. The Maxwell-Bloch approach based on rotating-wave approximation is employed to analyze the optimal conditions for controlling the behavior of optical bistability (OB). It is found that the threshold of OB can be optimized to have low values by tuning the intensity of coupling fields and the rate of an incoherent pumping field. This provides a fast real-time switching facility to control output intensity of the systems. The proposed scheme could have potential applications in optical memories, in which it is paramount to have active control over the readout of the system's quantum states. Thanks to the high nonlinear response of semiconductors, the featured device would be a prospective candidate for on-chip ultrasubluminal wave propagation studies and narrowband real-time switching and filtering applications.

Applied Optics•Sep 30, 2016•2 citations
We have proposed a scheme for all-optical switching and flip-flop based on controllable optical bistability in a simple three-level V-type atomic system assisted by an incoherent pump field. Due to the auxiliary incoherent pump, the atomic population is redistributed in the three levels, and then the absorption-dispersion property and the Kerr nonlinearity of the medium are different from those of the conventional V-type electromagnetically induced transparency system. The results show that both the thresholds and the area (or shape) of the hysteresis loop can be controlled efficiently via the adjustment of either the incoherent pump field or the coupling field. As a result, with a constant cavity input, the output of the optical cavity can be switched between the low- and high-power states of different bistable curves by tuning the optical fields. Based on this effect, we realize all-optical steady-state switching and set-reset flip-flop operation by adding a pulse sequence (positive pulse or set-reset pulse) onto either the incoherent pump field or the coupling field. Such a simple and effective technique of optical switching and flip-flop can find application in all-optical signal processing systems.
A compact design for semiconductor cavities including coupled AlGaN/AlGaAs quantum wells is proposed for all-optical switching of the bistability process. First, physical and geometrical parameters are optimized to engineer the conducting electrons' energy levels in the quantum wells. Then, finite element simulations based on Schrödinger equations are executed to estimate the states of the charge carriers for AlGaN/AlGaAs as the active region. Next, the optical coupling and pumping fields are applied to the active region to both initiate the bistability and facilitate its real-time control. The Maxwell-Bloch approach based on rotating-wave approximation is employed to analyze the optimal conditions for controlling the behavior of optical bistability (OB). It is found that the threshold of OB can be optimized to have low values by tuning the intensity of coupling fields and the rate of an incoherent pumping field. This provides a fast real-time switching facility to control output intensity of the systems. The proposed scheme could have potential applications in optical memories, in which it is paramount to have active control over the readout of the system's quantum states. Thanks to the high nonlinear response of semiconductors, the featured device would be a prospective candidate for on-chip ultrasubluminal wave propagation studies and narrowband real-time switching and filtering applications.