Energy-efficient rapid single flux quantum circuits having zero static power dissipation require a feeding Josephson junction transmission line (FJTL) to stabilize the power bus voltage. It is shown how a FJTL can be configured to obtain a desired current-bias window of constant delay, while preserving operability above and below that range as well, as a tradeoff against power and area. A test chip to validate circuit simulation results is designed with a gridded fabric for power delivery and cell placement, with consideration of passive transmission lines, magnetic flux exclusion, power bus isolation, and thermal noise. Measurements made on hardware fabricated in MIT Lincoln Lab's advanced 8-Nb-layer process correlate well with the model and indicate specific FJTL design challenges that need to be addressed.
Energy-efficient rapid single flux quantum circuits having zero static power dissipation require a feeding Josephson junction transmission line (FJTL) to stabilize the power bus voltage. It is shown how a FJTL can be configured to obtain a desired current-bias window of constant delay, while preserving operability above and below that range as well, as a tradeoff against power and area. A test chip to validate circuit simulation results is designed with a gridded fabric for power delivery and cell placement, with consideration of passive transmission lines, magnetic flux exclusion, power bus isolation, and thermal noise. Measurements made on hardware fabricated in MIT Lincoln Lab's advanced 8-Nb-layer process correlate well with the model and indicate specific FJTL design challenges that need to be addressed.
The Energy-efficient Rapid Single Flux Quantum (ERSFQ) logic family offers zero-static power dissipation. Any ERSFQ circuit requires a feeding Josephson transmission line (FJTL), a relatively large active transmission line, which serves as an accurate voltage source. For proper operation, the FJTL needs to be continuously pumped at a frequency that is equal to or higher than the highest clock frequency of the ERSFQ circuit. We selected an on-chip pseudo-random binary sequence (PRBS) generator as the example circuit since it naturally facilitates quantitative measurements of operating bias margins in terms of bit error rate (BER). Using external and internal flux pump sources, we performed extensive experimental studies on BER for ERSFQ PRBS generators operating at clock frequencies up to 50 GHz. We paid special attention to the over-pumping regime, where the FJTL pump frequency is higher than the PRBS clock frequency and confirmed its superiority in improving BER. At 35.56 GHz clock frequency, a group of 4 PRBS generators and 4 individual FJTLs with the bias current ratio (BCR) equal to 1, had a BER lower than 10−12and bias margins of ±25% for internal and external flux pump sources over-pumping at 6.25% above clock frequency. The maximal operational clock frequency of a single ERSFQ PRBS generator with intrinsic pump source (+6.25% over-pumping) and BER−12was 49.53 GHz. We also focused on optimization of the FJTL's size to reduce the power consumption and the area occupied by the FJTL itself. All chips were fabricated at MIT-Lincoln Laboratory using the SFQ5ee fab node. Future steps required for better understanding of ERSFQ operation are discussed.
Energy efficiency has become the primary parameter for the design of next-generation single flux quantum (SFQ) circuits. This, however, needs to be balanced with optimization for clock speed and bias margins. Here, we experimentally study the tradeoff between circuit activity, energy efficiency, and bias margins for zero static power dissipation ERSFQ circuits. For ERSFQ, dc power is provided by a Josephson transmission line (JTL) called a “feeding” JTL (FJTL), which acts as a voltage source. As a test case, shift registers and multiplexers were laid out and fabricated in both HYPRES's and MIT-LL's 10-kA/cm2fabrication processes and tested at low (~kHz) and high (~GHz) clock frequencies. The functional bias margins for these circuits increase significantly from +/-4% to over +/-19% when the Josephson junction count in the FJTL was increased to ~30% of total dc bias current of the circuit. Based on our findings, we discuss how to optimize ERSFQ circuits for both energy efficiency and dc bias margins.
Energy-efficient rapid single flux quantum (ERSFQ) circuits have become a viable alternative for the implementation of superconducting circuits due to a large amount of static power consumption in RSFQ circuits. ERSFQ circuits are built upon the popular RSFQ logic circuits by replacing the power-dissipating resistor bias network with a bias network consisting of active devices. In this paper, a simulation study of ERSFQ biasing scheme is carried out by building simulation test benches for both synchronous and asynchronous ERSFQ circuits. A study is carried out to present the optimum value of biasing inductance, influence of the feeding Josephson transmission line (FJTL) and the effect of its size, the effect of the feeding clock frequency, and the effect of the circuit operating frequency. An innovative clock-choking mechanism using magnetic Josephson junctions is also proposed for the FJTL in the case of no logic circuit activity for a current-recycling circuit block, which would help in eliminating the dynamic power consumed due to the switching of bias junctions in a logic circuit. Simulation results for current recycling ERSFQ circuits are presented along with a strategy for implementing large superconducting circuits.
Abstract As a member of the superconducting integrated circuit family, energy-efficient rapid single flux quantum (ERSFQ) circuit combines low-power consumption with high frequency, showing promise for application in high-energy efficient neuromorphic computing and traditional high-performance computing. Previous studies have demonstrated that there are typically two energy dissipation states in working ERSFQ circuits: energy-efficient SFQ state (E-state) and resistive-biased SFQ state (R-state). These states occur at different biasing current ranges, and the sum of the bias margin of these two states is close to the margin of rapid single flux quantum (RSFQ) circuits of the same design. For ultra-low-power applications, the bias current margin of the R-state must be excluded, leading to a substantially narrower bias margin in ERSFQ circuits than in their RSFQ counterparts. In our previous research, we proposed the feeding pulse method to increase the bias current margin by extending the lower boundary of the E-state through the injection of feeding pulses into the feeding Josephson transmission line (FJTL). In this study, we further investigated the current distribution mechanism in ERSFQ circuits and, based on this, proposed a method of optimizing design of the FJTL to redirect excess current to the FJTL, so as to expand the upper boundary of the E-state’s bias current margin. We tested an ERSFQ 8-bit shift register of the ERSFQ by applying methods proposed in this work together with the feeding pulses method proposed before. The results demonstrated that the bias current margin of the E-state expanded from (94%, 98%) to (56%, 116%), corresponding to a 14-times increase, with both the lower and upper boundary successfully extended. Our research addresses the issue of limited current bias margin in ERSFQ circuits during actual operation, providing a more robust ERSFQ technology for future applications in neural networks and high-performance computing.
To improve circuit density and minimize static power dissipation in Single Flux Quantum (SFQ) circuits, this work investigates the application of inductively biased, unshunted Josephson transmission lines (JTLs) which achieve zero static power, compared with regular resistively biased JTLs. Both simulation and experiment results confirm that unshunted JTLs can reliably propagate SFQ pulses with a bias current margin larger than 50%. Based on this, a new fabrication process has been developed featuring eight niobium (Nb) layers, including two Nb/Al-AlOx/Nb junction layers, a dedicated bias-inductor layer, and dual DC-power layers. The vertical functional separation allows 2 active layers. The 1stactive layer uses conventional shunted JJs for logic gates, while the 2nduses unshunted JTLs with inductive bias. This configuration eliminates static power in the interconnect network and simplifies thermal management in stacked Rapid SFQ (RSFQ) architectures. A ten-stage unshunted JTL chain and a hybrid half-adder were designed and demonstrated. Measurements show a 66.7% reduction in static power and a 64.7% reduction in area compared with the Chinese Academy of Scienceconventional single-JJ-layer process. These results verify, for the first time, that inductively biased unshunted interconnects can be monolithically integrated with standard RSFQ logic, offering a scalable path toward ultra-dense, lower-power multilayer superconducting circuits.
Superconducting single flux quantum (SFQ) circuits have been shown to offer huge advantages that are ideal for high performance computing applications. These circuits can operate at very high frequencies (tens of GHz) but consume very low power (from nanowatts to microwatts per gate). Energy-efficient SFQ (ERSFQ) circuits, evolved from traditional rapid SFQ (RSFQ) circuits, were invented with the goal of elimination of static power dissipation. When compared with RSFQ circuits, ERSFQ circuits require a new biasing network that includes biasing Josephson junction(s), biasing inductor(s), and feeding Josephson transmission line(s). Some general suggestions on how to design the network have been offered, but a detailed analysis and optimization scenario for the network is still to be provided. In this paper, we first optimize the previously reported DC-biased two-Josephson junction per bit RSFQ shift register circuit, which can be used to provide a more robust, energy-efficient, and high memory capacity storage unit. The simulated power dissipation of 16-bit RSFQ shift register is 0.45 μW per bit when operating at 21.7 GHz. We then convert the RSFQ-based shift register into an ERSFQ structure and investigate the effects of the ERSFQ bias network on the margins of the ERSFQ circuit. Finally, we propose a more comprehensive optimization method for the ERSFQ biasing network.