Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Semiconductors

Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping

А. Н. Грузинцев, A. N. Red’kin

Published Jan 1, 2019• 1 citation
Publisher

Abstract

Abstract The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

DOI
10.1134/s106378261901010x

Related papers

Нерезонансное обращение волнового фронта света на поверхности пленок GaN при большой мощности оптического возбуждения

А. Н. Грузинцев, A. N. Red’kin

AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

Физика и техника полупроводников•Dec 20, 2018•0 citations

Nonresonance Phase Conjugation of Light in Optically Pumped ZnO Films

А. Н. Грузинцев

Abstract The possibility of the nonresonance phase conjugation of light occurring in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial ZnO films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected. The dependences of the phase-conjugation signal intensity on the incident photon energy and laser-pumping intensity are studied. Interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

Semiconductors•Aug 1, 2020•2 citations

Нерезонансное обращение волнового фронта света в оптически возбужденных пленках ZnO

А. Н. Грузинцев

The opportunity of the nonresonant phase conjugation of light (NPC) in the excited semiconductor was shown theoretical and experimental. The induced NPC of light in the visibal and infrared spectral region was detected on the ZnO epitaxial films at room temperature by nitrogen laser pumping. The dependences of the NPC signal intensity on its photon energy and on the intensity of laser pumping were investigated. This effect explanation was given: change of absorption and refraction of the light on the laser induced free carriers in the semiconductor.

Физика и техника полупроводников•Jan 1, 2020•1 citation

Phase conjugation on the surface of optically excited ZnO

А. Н. Грузинцев, Vladimir T. Volkov

The feasibility of phase conjugation in excited semiconductor media is shown both theoretically and experimentally. For the first time, phase conjugation of a light wave (nitrogen laser) with a photon energy equal to half the exciton radiative recombination energy in the medium (ZnO epitaxial films) at room temperature is revealed. The spectral dependences of the phase conjugation signal are studied. The quadratic interaction between the electromagnetic and exciton waves in a semiconductor is suggested as a possible mechanism of this effect.

Semiconductors•May 1, 2004•9 citations

Phase conjugation at the surfaces of optically excited CuI films

А. Н. Грузинцев

The possibility of realizing an optical phase conjugation in an excited semiconductor medium is shown theoretically and experimentally. A phase conjugation is revealed for the photon energy equal to half the energy of the radiative recombination of excitons in CuI films pumped by a nitrogen laser at room temperature. The dependences of the phase-conjugation signal intensity on its spectral composition are investigated. The quadratic interaction of light and exciton electromagnetic oscillations in the semiconductor medium is suggested as an explanation of this effect.

Journal of Experimental and Theoretical Physics Letters•Aug 1, 2003•4 citations

Resonant-Phase Conjugation in YAlO3:Nd Single Crystals

А. Н. Грузинцев

A new spectral method for surface investigation based on optical-phase conjugation in an unexcited transparent medium is theoretically developed and experimentally verified. On YAlO 3 :Nd (1 at %) single crystals at room temperature, the phase conjugation of light is revealed for a photon energy equal to half the energy of resonant local oscillations of electrons of impurity centers. The dependences of the intensity of the phase-conjugation signal of light on its spectral structure are investigated. An explanation of the effect of the Raman scattering of light electromagnetic waves by neodymium ions is offered.

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques•Jan 1, 2018•0 citations
Abstract The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
AbstractThe possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
Abstract The possibility of the nonresonance phase conjugation of light occurring in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial ZnO films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected. The dependences of the phase-conjugation signal intensity on the incident photon energy and laser-pumping intensity are studied. Interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
The opportunity of the nonresonant phase conjugation of light (NPC) in the excited semiconductor was shown theoretical and experimental. The induced NPC of light in the visibal and infrared spectral region was detected on the ZnO epitaxial films at room temperature by nitrogen laser pumping. The dependences of the NPC signal intensity on its photon energy and on the intensity of laser pumping were investigated. This effect explanation was given: change of absorption and refraction of the light on the laser induced free carriers in the semiconductor.
The feasibility of phase conjugation in excited semiconductor media is shown both theoretically and experimentally. For the first time, phase conjugation of a light wave (nitrogen laser) with a photon energy equal to half the exciton radiative recombination energy in the medium (ZnO epitaxial films) at room temperature is revealed. The spectral dependences of the phase conjugation signal are studied. The quadratic interaction between the electromagnetic and exciton waves in a semiconductor is suggested as a possible mechanism of this effect.
The possibility of realizing an optical phase conjugation in an excited semiconductor medium is shown theoretically and experimentally. A phase conjugation is revealed for the photon energy equal to half the energy of the radiative recombination of excitons in CuI films pumped by a nitrogen laser at room temperature. The dependences of the phase-conjugation signal intensity on its spectral composition are investigated. The quadratic interaction of light and exciton electromagnetic oscillations in the semiconductor medium is suggested as an explanation of this effect.
A new spectral method for surface investigation based on optical-phase conjugation in an unexcited transparent medium is theoretically developed and experimentally verified. On YAlO 3 :Nd (1 at %) single crystals at room temperature, the phase conjugation of light is revealed for a photon energy equal to half the energy of resonant local oscillations of electrons of impurity centers. The dependences of the intensity of the phase-conjugation signal of light on its spectral structure are investigated. An explanation of the effect of the Raman scattering of light electromagnetic waves by neodymium ions is offered.