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Bulletin of the American Physical Society

Local trimming of transmon qubit frequency by laser annealing of Josephson junctions

Nandini Muthusubramanian, Alessandro Bruno, Brian Tarasinski, Andreas Fognini, Ronald Hagen, L. DiCarlo

Published Mar 4, 2019• 5 citations
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Reproducibility of Al/AlO x /Al Josephson junctions is a challenge for scaling up superconducting quantum processors. The frequency uncertainty of the transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction microstructure and electrical properties. Here, we present a solution for this problem using the post-fabrication Josephson junction thermal annealing process. The developed thermal post-exposure method allows not only to increase the junction resistance by 175%, but also to decrease by 60% with a step of 10% in R n , which opens up new possibilities for tuning the frequency of qubits. The resistance is shown to be strongly temperature dependent, and is weakly dependent on the holding time. The linear dimensions of the electrodes and the sidewalls contribution to the total JJ area also have a significant impact on the final resistance after annealing. Finally, a theoretical model of the structure modification in a tunnel barrier with changes in oxygen concentration gradient is proposed. The proposed thermal annealing approach can be used to form stable and reproducible tunnel barriers and scalable frequency trimming for widely used fixed-frequency transmon qubits.
Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art nanoelectronic processes one can fabricate hundreds of qubits on a single silicon chip. However, decoherence in these systems caused by two-level-systems in amorphous dielectrics, including a tunneling barrier AlOx, is one of the major problems. We report on a Josephson junction thermal annealing process development to crystallize an amorphous barrier oxide (AlOx). The dependences of the thermal annealing parameters on the room temperature resistance are obtained. The developed method allows not only to increase the Josephson junction resistance by 175%, but also to decrease by 60% with precisions of 10% in Rn. Finally, theoretical assumptions about the structure modification in tunnel barrier are proposed. The suggested thermal annealing approach can be used to form a stable and reproducible tunneling barriers and scalable frequency trimming for a widely used fixed-frequency transmon qubits.