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Bulletin of the American Physical Society

Radiationless Creation and Patterning of Color Centers in Diamond

Patrick J. McQuade, Andrew Elias-Gonzalez, Matthew A. Gebbie, Nicholas A. Melosh

Published Mar 6, 2019• 0 citations
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Color centers in diamond have widespread utility in quantum technologies, but their creation process remains stochastic in nature. Deterministic creation of color centers in device-ready diamond platforms can improve the yield, scalability, and integration. Recent work using pulsed laser excitation has shown impressive progress in deterministically creating defects in bulk diamond. Here, we extend this laser-writing process into nanophotonic devices etched into diamond membranes, including nanopillars and photonic resonators with writing and subsequent readout occurring in situ at cryogenic temperatures. We demonstrate the optically driven creation of carbon vacancy (GR1) and nitrogen vacancy (NV) centers in diamond nanopillars and observe enhanced photoluminescence collection from them. We also fabricate bullseye resonators and leverage their cavity modes to locally amplify the laser-writing field, yielding defect creation with picojoule write-pulse energies 100 times lower than those typically used in bulk diamond demonstrations.
I discuss new ways to grow diamond that promise near-deterministic design of fluorescent color-centers, optimized for quantum sensing and metrology applications. The key is to grow diamond from organic molecules at a low enough temperature such that only some of the molecules decompose. This approach gives unprecedented control over the properties of diamond color centers by decoupling diamond-growth from color-center creation. In addition, low growth temperature produces high quality diamonds and allows a wider choice of growth pressures than is currently believed possible.
Abstract The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single‐photon devices. Here, the scalable production of silicon‐vacancy (SiV) color centers in single‐crystal diamond by ion implantation up to m depths is presented. The lateral position of the SiV is spatially controlled by a 1‐m pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. The role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters is also discussed.