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Bulletin of the American Physical Society

Superradiance in Spherical Layered Nanostructures

S. V. Goupalov

Published Mar 14, 2016• 0 citations
OpenAlex

Abstract

We propose a design of a spherically symmetric nanostructure consisting of alternate concentric semiconductor and dielectric layers. The exciton states in different semiconductor layers of such a structure interact via the common electromagnetic field of light. We show that, if the exciton states in $N$ semiconductor layers are in resonance with one another, then a superradiant state emerges under optical excitation of such a structure. We discuss the conditions under which superradiance can be observed and show that they strongly depend on the valence-band structure of the semiconductor layers.

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We propose a design of a spherically symmetric nanostructure consisting of alternate concentric semiconductor and dielectric layers. The exciton states in different semiconductor layers of such a structure interact via the common electromagnetic field of light. We show that, if the exciton states in NNN semiconductor layers are in resonance with one another, then a superradiant state emerges under optical excitation of such a structure. We discuss the conditions under which superradiance can be observed and show that they strongly depend on the valence-band structure of the semiconductor layers.
We propose a design of a spherically symmetric nanostructure consisting of alternate concentric semiconductor and dielectric layers. The exciton states in different semiconductor layers of such a structure interact via the common electromagnetic field of light. We show that, if the exciton states in NNN semiconductor layers are in resonance with one another, then a superradiant state emerges under optical excitation of such a structure. We discuss the conditions under which superradiance can be observed and show that they strongly depend on the valence-band structure of the semiconductor layers.
This work focuses on the many-body properties of semiconductor nanostructures for quantum engineering of infrared optoelectronic devices. In particular, we theoretically investigate the optical response accounting for collective effects in systems of tunnel-coupled quantum wells. A clear manifestation of these effects appears in the optical spectrum of highly doped quantum wells, where the absorption peaks are at completely different energies with respect to the single-particle electronic transitions. We calculate light-matter interaction in two steps. First, we consider the microscopic polarization associated with the electronic transitions between confined levels of the wells, which are all coupled by dipole-dipole Coulomb interaction. Then we calculate the interaction of the resulting collective states with the electromagnetic field. The absorption spectrum is finally expressed in terms of microscopic currents, describing the collective charge oscillations. The theoretical model is applied to a series of relevant systems, and its outcomes are compared with experimental results. As the collective states are issued from the coherent superposition of several electronic excitations, they have the properties of superradiant states. They are thus a promising entity for the realization of efficient light emitters in the mid- and far-infrared frequency range.
Semiconductor microcavities are widely used to study collective interactions of cavity exciton-polaritons leading to their condensation phenomenon. Exciton-light interaction is highly enhanced in such structures due to the resonance enhancement of the electromagnetic field inside the high quality cavity. Considerably lower interest is concerned to exciton states non-resonant with the cavity mode for which the exciton-photon interaction is strongly reduced due to the existence of the cavity. We point out here that these states are responsible for non-classical light generation in semiconductor microcavities.
A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.
We have demonstrated ultrafast coherent control of excitons and exciton-polaritons in semiconductor quantum nanostructures. An InGaAs/AlGaAs multi-quantum-well Bragg structure and an AlGaAs/GaAs crescent-shaped quantum wire structure were used as samples for the control of the exciton-polariton and excitons in the nanostructure. In the multi-quantum-well Bragg sample, a two-stage decay due to the super-radiant exciton-polariton mode is clearly observed under the resonance conditions. Highly sensitive coherent control measurement enables us to observe the dephasing characteristics in the crescent-shaped quantum wire sample, and a very fast dephasing time T 2 of between 200 fs and 300 fs with power dependence was observed.