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Japanese Journal of Applied Physics

Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure

Kazuhiro Komori, Gary R. Hayes, Takumi Okada, B. Deveaud, Xue‐Lun Wang, Mutsuo Ogura, Masanobu Watanabe

Published Apr 30, 2002• 9 citations
Publisher

Abstract

We have demonstrated ultrafast coherent control of excitons and exciton-polaritons in semiconductor quantum nanostructures. An InGaAs/AlGaAs multi-quantum-well Bragg structure and an AlGaAs/GaAs crescent-shaped quantum wire structure were used as samples for the control of the exciton-polariton and excitons in the nanostructure. In the multi-quantum-well Bragg sample, a two-stage decay due to the super-radiant exciton-polariton mode is clearly observed under the resonance conditions. Highly sensitive coherent control measurement enables us to observe the dephasing characteristics in the crescent-shaped quantum wire sample, and a very fast dephasing time T 2 of between 200 fs and 300 fs with power dependence was observed.

DOI
10.1143/jjap.41.2660

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We have investigated the ultrafast coherent dynamics of exciton-polaritons and excitons in semiconductor quantum nanostructures, including InGaAs/AlGaAs multi quantum well Bragg structures and AlGaAs/GaAs crescent shaped quantum wire samples, by using a phase-locked spectroscopic technique. In the multi quantum well Bragg sample, a two-stage decay due to the superradiant exciton-polariton mode is clearly observed at the resonant condition. In the crescent shaped quantum wire sample, the highly sensitive coherent control measurement enables us to observe the dephasing characteristics and a very fast dephasing time T-2 of 200 to 300 Is with power dependence was observed.
The coherent emission from excitons corresponding to different subband transitions in a 500 Åbroad GaAs/AlGaAs quantum well is studied by spectrally resolved transient four-wave mixing (FWM). For the simultaneous excitation of several subband transitions, the dephasing times of the lowest exciton and higher- order exciton transitions are determined from the width of the resonances in the FWM spectrum. The decay of the spectrally integrated FWM signal as a function of the time delay between the excitation laser pulses does not reflect the dephasing times but is determined by the laser pulse width for multi-subband excitation. This is indicative of quantum interference between exciton and continuum transitions. Many-body Coulomb effects have to be included in a theoretical treatment of these experimental observations.
Summary form only given. Ultrafast coherent control of excitons in semiconductors have been reported using Michelson interferometer with precise control of the pulse interval in time domain. In order to improve the phase controllability and realize arbitrary manipulation, the pulse shaping technique is a more attractive candidate. In this paper, we report very fine phase control of coherent, excitons in GaAs/AlGaAs single quantum wells using phase-locked pulses prepared by pulse shaping technique.
Semiconductors systems exhibiting excitonic properties are discussed in terms of their coherent response, which is extracted using two-dimensional coherent spectroscopy. This control method allows for separation of quantum pathways that comprise the optical response, such as interactions between excitons, their dephasing rates, the effects of many-body interactions and the role of structure on the microscopic electronic environment. Additional controls, such as polarization can be used to further distinguish biexcitons and suppress many-body interactions. These result are compared and contrasted with those from a semiconductor microcavity where the excitons form polaritonic modes due to normal-mode splitting. Rephrasing spectra map the detuning dependence of the exciton-polariton branches. Increasing the detuning shifts all features to higher energy and the expected anti-crossing is observed. An isolated biexciton is seen only at negative detuning, separated by a binding energy. For positive detuning, the spectral weight of the off-diagonal features swap, as the lower polariton branch and biexciton come into resonance. This indicates that the off-diagonal features are sensitive to the interactions of the exciton-polaritons and other resonances in the system.
We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.