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Bulletin of the American Physical Society

Analyzing the fidelity of a singlet-triplet spin-orbit qubit in silicon using gate set tomography

Chloé Bureau-Oxton, Kenneth Rudinger, N. Tobias Jacobson, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Tammy C. Pluym, Michael P Lilly, Michel Pioro-Ladrière, Dwight R. Luhman, Malcolm S. Carroll

Published Mar 5, 2019• 0 citations
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We propose an optimized set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the $S\text{\ensuremath{-}}{T}_{\ensuremath{-}}$ subspace. Qubit rotations are driven by the applied magnetic field and a field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of the magnetic fields, taking advantage of ``sweet spots'' where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states. Our results show that, for silicon quantum dots, gate fidelities greater than $99%$ should be realizable, for rotations about two nearly orthogonal axes.

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µmSpin-orbit effects in silicon have long been considered of minor importance for the operation of spin qubits.Contrary to this belief, recent and growing amounts of evidence in systems like spin 1/2 and atomic-precision devices seem to indicate otherwise, but the exact mechanisms and implications are not well understood.In this work, we use a metal-oxide-semiconductor and poly-Si (metal-free) double quantum dot singlet-triplet qubit as a sensitive probe of the spin-orbit effect.We first show that a strong magnetic field enables rotations between the singlet S and unpolarized triplet T 0 , an effect which amounts to an effective g-factor difference between the two quantum dots and is affected by gate voltages.Twoaxis control and single shot readout of the qubit is used to study AC resonant control in the deep detuning regime and achieve few microsecond Rabi flip times.Perhaps surprisingly, singlet-triplet qubits "just turn" without engineering feats.Secondly, we investigate a different effect of the spin-orbit interaction on the S-T -transition and its impact on schemes like dynamic nuclear polarization.Our results shed light on the implications of spin-orbit interaction for the operation of spin qubits in silicon.
We propose an optimized set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the $S\text{\ensuremath{-}}{T}_{\ensuremath{-}}$ subspace. Qubit rotations are driven by the applied magnetic field and a field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of the magnetic fields, taking advantage of ``sweet spots'' where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states. Our results show that, for silicon quantum dots, gate fidelities greater than 9999%99 should be realizable, for rotations about two nearly orthogonal axes.