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Journal of Physics Conference Series

Superconducting nanowire single-photon detector on lithium niobate

Eugenii Smirnov, Alexander D. Golikov, Philipp I. Zolotov, Vadim V. Kovalyuk, Mirko Lobino, B. Voronov, Alexander A. Korneev, Gregory N Gol'tsman

Published Dec 1, 2018• 10 citations
Publisher

Abstract

We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s −1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.

DOI
10.1088/1742-6596/1124/5/051025

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We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s −1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
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We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide, on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rate and timing jitter. As LN possesses high second-order nonlinear \c{hi}(2) and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct small scale fully-integrated quantum photonic chip which includes single-photon sources, filters, tunable quantum gates and detectors.
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LiNbO3, LN). Using a 250 μm-long NbN superconducting nanowire lithographically defined on top of a 125 μm-long LN nanowaveguide, an on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rates and timing jitter. As LN possesses high χ(2) second-order nonlinear and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct a small-scale fully integrated quantum photonic chip, which includes single-photon sources, filters, tunable quantum gates, and detectors.
Here, we demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LiNbO3, LN). Using a 250 μm-long NbN superconducting nanowire lithographically defined on top of a 125 μm-long LN nanowaveguide, an on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rates and timing jitter. As LN possesses high χ(2) second-order nonlinear and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct a small-scale fully integrated quantum photonic chip, which includes single-photon sources, filters, tunable quantum gates, and detectors.
We demonstrate an amorphous molybdenum–rhenium (MoRe) film on a thin-film lithium niobate substrate as an efficient superconducting nanowire single-photon detector (SNSPD) operating at T = 2.5 K. MoRe films were deposited by DC magnetron sputtering with a composite target of 56 at. % Mo and 44 at. % Re on lithium niobate on insulator substrates at room temperature. We investigated the spectral and temporal performance of MoRe SNSPDs as well as the detection regimes of one and multiple photons. The fabricated detector with a nanowire width of about 150 nm shows an internal detection efficiency of approximately 98% and 73.5% for the most crucial wavelengths for integration on the chip, 780 and 1550 nm, respectively. Our results show great potential for the use of MoRe for scalable and cryogenic tunable quantum photonic integrated circuits.
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm× 30 μm.To achieve non-constricted detectors,we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide Nb N nanowires with a fill factor of 50%.The devices showed 72.4% system detection efficiency(SDE) at 100-Hz dark count rate(DCR) and 74-ps timing jitter,measured at the fiber communication wavelength of 1550 nm.The highest SDE which is 81.2% when the DCR is ～ 700 c/s appears at the wavelength of 1650 nm.