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Journal of Physics B Atomic Molecular and Optical Physics

Controllable optical bistability and multistability in asymmetric quantum wells via Fano-type interference

Dong Sun, Hongjun Zhang, Hui Sun

Published Dec 6, 2018• 6 citations
Publisher

Abstract

Abstract We theoretically investigate the hybrid absorptive-dispersive optical bistability (OB) and optical multistability (OM) behaviors induced by Fano-type interference in a four-subband asymmetric semiconductor double quantum wells scheme driven by a degenerate probe field and a coherent coupling field. We show that the appearance or disappearance of OB can be controlled by modulating the strength of the Fano-type interference. We also present the threshold and hysteresis cycle of the OB can be controlled by adjusting the intensity of the coherent coupling field. Moreover, OB can be switched to OM by tuning the frequency detuning of the coherent coupling field or vice versa. This interesting scheme may provide guidance for technological applications in optoelectronics and solid-state quantum information science.

DOI
10.1088/1361-6455/aaf601

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Abstract We theoretically investigate the hybrid absorptive-dispersive optical bistability (OB) and optical multistability (OM) behaviors induced by Fano-type interference in a four-subband asymmetric semiconductor double quantum wells scheme driven by a degenerate probe field and a coherent coupling field. We show that the appearance or disappearance of OB can be controlled by modulating the strength of the Fano-type interference. We also present the threshold and hysteresis cycle of the OB can be controlled by adjusting the intensity of the coherent coupling field. Moreover, OB can be switched to OM by tuning the frequency detuning of the coherent coupling field or vice versa. This interesting scheme may provide guidance for technological applications in optoelectronics and solid-state quantum information science.
We study optical bistability (OB) behavior based on intersubband transitions in asymmetric double quantum wells (QWs) where tunneling-induced quantum inference can be observed. The system interacts with a probe-laser field and a control laser field by means of a unidirectional ring cavity. We show that OB can be controlled efficiently by tuning the coupling strength of the tunneling, the Fano-type interference, and the intensity of the control field. The influence of the frequency detuning of the probe and control fields on the electronic OB behavior is also discussed. This investigation can be used for the optimal design of semiconductor QW systems to achieve fast and low-threshold all-optical switches, which is much more practical than that in an atomic system because of its flexible design and the controllable interference strength.
Abstract The problem of optical bistability (OB) and optical multistability (OM) is numerically investigated in a four-level inverted Y-type semiconductor quantum well (SQW) structure immersed in a unidirectional ring cavity. In the four-level SQW system under consideration, a closed loop configuration is coupled to the upper level through a tunable probe field. We show that the OB threshold intensity can be controlled via the intensity of coupling fields which gives rise to the absorption variation of the probe field. In addition, due to the existence of the closed-loop configuration, the OB and OM behaviors of the proposed SQW medium are dependent on the relative phase of the applied fields. It is found that the OB can be switched to OM or vice versa by properly adjusting the relative phase of the applied fields. The results may provide new possibilities in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
We theoretically investigate the behaviour of optical bistability (OB) and optical multistability (OM) in a generic double two-level atomic system driven by two orthogonally polarized fields (a π-polarized control field and a σ-polarized probe field). It is found that the behaviour of OB can be controlled by adjusting the intensity or the frequency detuning of the control field. Interestingly enough, our numerical results also show that it is easy to realize the transition from OB to OM or vice versa by adjusting the relative phase between the control and probe fields. This investigation can be used for the development of new types of devices for realizing an all-optic switching process.
This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
In this paper, we propose a scheme for manipulating the behavior of optical bistability (OB) and optical multistability (OM) in an N-type four-level atomic system. In the scheme, quantum interference is optimized by the left-handed and the right-handed fields of an elliptically polarized field (EPF). The threshold and the hysteresis cycle shape of OB and OM can be controlled by modulating the intensity of the EPF. Especially, the transition from OB to OM or vice versa can also be easily realized by proper tuning the phase difference between the left-handed and right-handed polarized fields under the optimal intensity of the EPF.
The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.