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IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

Bottom up Nano-integration Technique for the Fabrication of Novel Superconducting Quantum Interference Devices Based on Granular Superconducting Diamond

Somnath Bhattacharyya, Victor Koledov, Svetlana von Gratowski, Christopher Coleman, Чурочкин Дмитрий Викторович, Alexander Zeigler, Farai Mazhandu, Иржак Артемий Вадимович

Published Aug 1, 2018• 2 citations
Publisher

Abstract

The report is focused on the fabrication and characterization of nano-necklaces created from individual nanostructures namely heavily boron-doped superconducting nano-diamond grains and BIISCO whiskers. The production of nanostructures from individual nano-diamonds is done using 3D mechanical nano-manipulation and nano-assembling based on new generation shape memory alloy composite nanotweezers. Quantum transport of such nano-necklaces will be probed in order to study the confinement effects on superconductivity and other related quantum effects. This bottom-up nano-integration technique thus demonstrates a niche fabrication route for the realization of novel complex nanostructured quantum rings which may be of use for quantum information technologies.

DOI
10.1109/3m-nano.2018.8552214

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The report is focused on the fabrication and characterization of nano-necklaces created from individual nanostructures namely heavily boron-doped superconducting nano-diamond grains and BIISCO whiskers. The production of nanostructures from individual nano-diamonds is done using 3D mechanical nano-manipulation and nano-assembling based on new generation shape memory alloy composite nanotweezers. Quantum transport of such nano-necklaces will be probed in order to study the confinement effects on superconductivity and other related quantum effects. This bottom-up nano-integration technique thus demonstrates a niche fabrication route for the realization of novel complex nanostructured quantum rings which may be of use for quantum information technologies.
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Recent improvements in materials growth and fabrication techniques may finally allow for superconducting semiconductors to realize their potential. Here, we build on a recent proposal to construct superconducting devices such as wires, Josephson junctions, and qubits inside and out-of single crystal silicon or germanium. Using atomistic fabrication techniques such as STM hydrogen lithography, heavily doped superconducting regions within a single crystal could be constructed. We describe the characteristic parameters of basic superconducting elements-a 1-D wire and a tunneling Josephson junction-and estimate the values for boron-doped silicon. The epitaxial, single-crystal nature of these devices, along with the extreme flexibility in device design down to the single-atom scale, may enable lower noise or new types of devices and physics. We consider applications for such supersilicon devices, showing that the state-of-the-art transmon qubit and the sought-after phase-slip qubit can both be realized. The latter qubit leverages the natural high kinetic inductance of these materials. Building on this, we explore how kinetic inductance-based particle detectors (e.g., photon or phonon) could be realized with potential application in astronomy or nanomechanics. We discuss supersemi devices (such as in silicon, germanium, or diamond) which would not require atomistic fabrication approaches and could be realized today.
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Abstract The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.
Thermal effects serve as universal stimuli for material transformation, capable of inducing processes, such as crystallization, evaporation, and melting in various materials. In this paper, we propose an efficient and cost-effective fabrication method based on nano-laser direct writing (NLDW) technology for the fabrication of Nb constricted junctions and superconducting quantum interference devices induced by thermal effects. By narrowing the spacing between laser paths step by step, the I–V characteristics of constricted junctions can be continuously adjusted from collective Cooper pair transport to Josephson junction behavior. Additionally, the heat-affected zones induced by laser irradiation were characterized by heat transfer simulations and electrical transport behavior. Furthermore, the flux noise spectral density of a patterned superconducting quantum interference device based on NLDW is 2.8μΦ0/Hz1/2 in the white noise range, which exhibits comparable performance to devices based on traditional ion beam or electron beam etching processes. In this case, this technique could provide a reliable and reproducible pathway for scaling up the fabrication of superconducting quantum circuits, as well as an avenue to conduct nanoscale thermal engineering in superconducting materials research for basic science.