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Optics Express

Interferometric photodetection in silicon photonics for phase diffusion quantum entropy sources

Miquel Rudé, Carlos Abellán, Albert Capdevila, David Doménech, Morgan W. Mitchell, Waldimar Amaya, Valerio Pruneri

Published Nov 19, 2018• 23 citations
Publisher

Abstract

We report the interferometric photodetection of a phase-diffusion quantum entropy source in a silicon photonics chip. The device uses efficient and robust single-laser accelerated phase diffusion methods, and implements the unbalanced Mach-Zehnder interferometer with optimized splitting ratio and photodetection, in a 0.5 mm×1 mm footprint. We demonstrate Gbps raw entropy-generation rates in a technology compatible with conventional CMOS fabrication techniques.

DOI
10.1364/oe.26.031957

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We report the interferometric photodetection of a phase-diffusion quantum entropy source in a silicon photonics chip. The device uses efficient and robust single-laser accelerated phase diffusion methods, and implements the unbalanced Mach-Zehnder interferometer with optimized splitting ratio and photodetection, in a 0.5 mm×1 mm footprint. We demonstrate Gbps raw entropy-generation rates in a technology compatible with conventional CMOS fabrication techniques.
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Random numbers are a fundamental resource in science and technology. Among the different approaches to generating them, random numbers created by exploiting the laws of quantum mechanics have proven to be reliable and can be produced at enough rates for their practical use. While these demonstrations have shown very good performance, most of the implementations using free-space and fibre optics suffer from limitations due to their size, which strongly limits their practical use. Here we report a quantum random number generator based on phase fluctuations from a diode laser, where the other required optical components are integrated on a mm-scale monolithic silicon-on-insulator chip. The post-processing reported in this experiment is performed via software. However, our physical device shows the potential of operation at generation rates in the Gbps regime. Considering the device's size, its simple, robust and low power operation, and the rapid industrial uptake of silicon photonics, we foresee the widespread integration of the reported design in more complex systems.
Random numbers are a fundamental resource in science and technology. Among the different approaches to generating them, random numbers created by exploiting the laws of quantum mechanics have proven to be reliable and can be produced at enough rates for their practical use. While these demonstrations have shown very good performance, most of the implementations using free-space and fibre optics, suffer from limitations due to their size, which strongly limits their practical use. Here we report a quantum random number generator based on phase fluctuations from a diode laser, where the other required optical components are integrated on a mm-scale monolithic silicon-on-insulator chip. Our device operates with generation rate in the Gbps regime and the output random numbers pass the NIST statistical tests. Considering the device's size, its simple, robust and low power operation, and the rapid industrial uptake of silicon photonics, we foresee the widespread integration of the reported design in more complex systems.
The capability of realizing quantum photonics implementations on-chip will have a strong impact on several aspects of quantum computation and information processing. The implementation of large scale integrated quantum photonic technologies requires on-chip reconfigurable waveguide circuits as well as single-photon sources and detectors. Many successes have been made in recent years to demonstrate complex quantum circuits in many material platforms. Among all these platforms, the Silicon-on-Insulator (SOI) platform is outstanding as it is well developed for classical applications and therefore deploys a high component density, mature fabrication techniques and compatibility with the telecom regime and the complementary metal-oxide-semiconductor (CMOS) technology. However, the lack of on-demand non-classical light sources, directly incorporated in silicon chips, forces the use of nonlinear processes to generate non-classical light states: the probabilistic nature of the emission process sets a limit in the maximally achievable experimental complexity. The use of on-demand sources will have a strong impact on the device’s scalability.