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Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

Christian Volk, Frederico Martins, Filip K. Malinowski +2 more

Bulletin of the American Physical SocietyMar 14, 20170 citations

Charge noise and overdrive effects in dispersive readout of charge and spin qubits

Vahid Derakhshan Maman, M. Fernando González-Zalba, András Pályi

Bulletin of the American Physical SocietyMar 18, 20210 citations

High-fidelity readout and control of a nuclear spin qubit in silicon

Jarryd J. Pla, Kuan Yen Tan, Juan Pablo Dehollain +6 more

arXiv:1302.0047NatureApr 1, 2013533 citations

Dispersive vs charge-sensing readout for linear quantum registers

A. Aprá, Alessandro Crippa, M. L. V. Tagliaferri +17 more

We present recent progress in the implementation of scalable schemes for spin qubit readout in one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. We compare two schemes both based on rf gate reflectometry. The first one, denoted as dispersive readout, minimizes the device overhead thereby facilitating scale-up to large qubit registers. The second one, denoted as charge-sensing readout, requires additional readout components but is less sensitive to the strength of the interdot coupling facilitating operation in the few-electron regime. We demonstrate single-shot charge sensing with a fidelity of 97% in 5 μs. Finally, we propose a scalable device architecture for linear qubit registers relying on charge-sensing readout.We present recent progress in the implementation of scalable schemes for spin qubit readout in one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. We compare two schemes both based on rf gate reflectometry. The first one, denoted as dispersive readout, minimizes the device overhead thereby facilitating scale-up to large qubit registers. The second one, denoted as charge-sensing readout, requires additional readout components but is less sensitive to the strength of the interdot coupling facilitating operation in the few-electron regime. We demonstrate single-shot charge sensing with a fidelity of 97% in 5 μs. Finally, we propose a scalable device architecture for linear qubit registers relying on charge-sensing readout.

Technical digest - International Electron Devices Meeting/Technical digestDec 12, 20203 citations

Four-state discrimination for a pair of spin qubits via gate reflectometry

Aritra Sen, András Pályi

Single-electron spin qubits defined in quantum dots are used as building blocks of a semiconductor-based quantum computer. Readout in a scaled-up version of such a quantum computer is expected to rely on the Pauli Spin Blockade (PSB) mechanism. A desired functionality of PSB readout is that it reveals two bits of information on the two spin qubits that are involved in the process, such that the four computational basis states can be discriminated. In this work, we propose and quantitatively analyze an experimental procedure, based on gate reflectometry, which enables this four-state discrimination in a single measurement. We provide an intuitive recipe to maximize the contrast between the quantum capacitances of the four basis states. Focusing on silicon double quantum dots equipped with a micromagnet, we quantify how amplifier noise and phonon-mediated relaxation influence readout fidelity. Our results highlight a realistic opportunity to mitigate the overhead of readout ancilla qubits in a spin-based quantum computer.Single-electron spin qubits defined in quantum dots are used as building blocks of a semiconductor-based quantum computer. Readout in a scaled-up version of such a quantum computer is expected to rely on the Pauli Spin Blockade (PSB) mechanism. A desired functionality of PSB readout is that it reveals two bits of information on the two spin qubits that are involved in the process, such that the four computational basis states can be discriminated. In this work, we propose and quantitatively analyze an experimental procedure, based on gate reflectometry, which enables this four-state discrimination in a single measurement. We provide an intuitive recipe to maximize the contrast between the quantum capacitances of the four basis states. Focusing on silicon double quantum dots equipped with a micromagnet, we quantify how amplifier noise and phonon-mediated relaxation influence readout fidelity. Our results highlight a realistic opportunity to mitigate the overhead of readout ancilla qubits in a spin-based quantum computer.

cond-mat.mes-hallCross-listedarXiv:2603.07806Mar 10, 2026

Impact of Device Design and Qubit-Sensor Distance on State Readout of Silicon Spin Qubits

Shota Iizuka, Hidehiro Asai, Kimihiko Kato +5 more

International Conference on Solid State Devices and Materials (SSDM)Sep 15, 20260 citations

Gate-reflectometry dispersive readout of a spin qubit in silicon

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