We have investigated the optical properties of the ${(\mathrm{NV})}^{\ensuremath{-}}$ center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the $^{3}\mathrm{E}\ensuremath{\rightarrow}^{3}\mathrm{A}_{2}$ intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the ${\mathrm{NV}}^{\ensuremath{-}}\phantom{\rule{0.28em}{0ex}}\mathrm{center}$ in 3C-SiC has a ZPL line at 1.468 $\ensuremath{\mu}\mathrm{m}$ in excellent agreement with theoretical predictions. The ZPL line can be observed up to $T=100$ K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin $S=1$ ground state and a spin $S=1$ excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at $1.5\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{m}$, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.We have investigated the optical properties of the ${(\mathrm{NV})}^{\ensuremath{-}}$ center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the $^{3}\mathrm{E}\ensuremath{\rightarrow}^{3}\mathrm{A}_{2}$ intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the ${\mathrm{NV}}^{\ensuremath{-}}\phantom{\rule{0.28em}{0ex}}\mathrm{center}$ in 3C-SiC has a ZPL line at 1.468 $\ensuremath{\mu}\mathrm{m}$ in excellent agreement with theoretical predictions. The ZPL line can be observed up to $T=100$ K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin $S=1$ ground state and a spin $S=1$ excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at $1.5\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{m}$, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.

Physical review. B./Physical review. BOct 15, 201853 citations

NV Centers Coherent Behavior in 6H-SiC Crystal under Optical Nonresonant Excitation

Fadis F. Murzakhanov, Georgy Vladimirovich Mamin, Ekaterina V. Dmitrieva +3 more

Solid-state spin defects in semiconductor matrices have become a robust medium for holding electron qubit ensembles. In this paper, the features of NV centers’ spin polarization in a silicon carbide 6 H -SiC crystal, and the laser excitation influence on the coherent properties of the color center were studied by the photoinduced pulsed EPR spectroscopy (W-band, 94 GHz). After the optical pulse, in the dark-mode regime, the characteristic time of the spin-phonon interaction of NV defects with the local environment lengthens by 1 order of magnitude compared to continuous laser irradiation, reaching a value of T 1 = 0.74 s at temperature of 50 K. An extremely efficient spin polarization (> 90%) of NV centers was discovered, which is necessary for establishing the initial pure quantum state. The obtained spin-optical and coherent properties delineate the time domain of multipulse quantum manipulations involving optical and microwave sources for promising NV centers in quantum photonics.Solid-state spin defects in semiconductor matrices have become a robust medium for holding electron qubit ensembles. In this paper, the features of NV centers’ spin polarization in a silicon carbide 6 H -SiC crystal, and the laser excitation influence on the coherent properties of the color center were studied by the photoinduced pulsed EPR spectroscopy (W-band, 94 GHz). After the optical pulse, in the dark-mode regime, the characteristic time of the spin-phonon interaction of NV defects with the local environment lengthens by 1 order of magnitude compared to continuous laser irradiation, reaching a value of T 1 = 0.74 s at temperature of 50 K. An extremely efficient spin polarization (> 90%) of NV centers was discovered, which is necessary for establishing the initial pure quantum state. The obtained spin-optical and coherent properties delineate the time domain of multipulse quantum manipulations involving optical and microwave sources for promising NV centers in quantum photonics.

The Journal of Physical Chemistry CJul 4, 20251 citation

Preparation of diamond NV centers and study on methods for spin coherence characterization

Haoliang Hu, Han Wang, Xiaofei Li +1 more

International Conference on Optoelectronic Materials and Devices (ICOMD)May 18, 20260 citations

Double quantum coherence control in NV- centers in Diamond at small fields

Osama Moussa, Ian Hincks, David G. Cory

Bulletin of the American Physical SocietyJun 7, 20130 citations

Spin coherence mapping of NV centers in diamond

Lucas Nunes Sales de Andrade, Charlie Oncebay Segura, Sérgio Ricardo Muniz

In recent years, nitrogen-vacancy (NV) color centers in diamond have become excellent solid-state quantum sensors due to their electronic spin properties. Especially for their easy optical initialization and detection, together with their very large spin coherence at room temperature. Many studies have reported their use for sensing temperature, strain, electric fields, and mainly magnetic fields. Here, we show how to build a two-dimensional map of the electronic spin coherence of an ensemble of NV centers in ultra-pure diamond, using an optical imaging protocol combined with microwave pulses relying simply on a regular CCD camera.In recent years, nitrogen-vacancy (NV) color centers in diamond have become excellent solid-state quantum sensors due to their electronic spin properties. Especially for their easy optical initialization and detection, together with their very large spin coherence at room temperature. Many studies have reported their use for sensing temperature, strain, electric fields, and mainly magnetic fields. Here, we show how to build a two-dimensional map of the electronic spin coherence of an ensemble of NV centers in ultra-pure diamond, using an optical imaging protocol combined with microwave pulses relying simply on a regular CCD camera.

arXiv:2209.05577Sep 12, 20220 citations

T=100

K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin

S=1

ground state and a spin

S=1

excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at $1.5\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{m}$, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.