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On-chip hybrid superconducting-semiconducting circuits for scalable topological quantum computing

Kaveh Delfanazari, Reuben K. Puddy, Pengfei Ma, Teng Yi, M Cao, Y. Gul, Ian A. Farrer, D. A. Ritchie, Hannah Jane Joyce, Matthew Kelly, C. G. Smith

Published Sep 5, 2017• 0 citations
OpenAlex

Abstract

In this presentation, a brief introduction to the device fabrication techniques will be given followed by discussion on sub-Kelvin transport measurements results. The effect of temperature and magnetic field on the differential conductance will be discussed.

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On-chip Hybrid Superconducting-Semiconducting Quantum Circuit

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In this paper, we experimentally demonstrate a hybrid superconducting-semiconducting circuit consisting of eight planar and ballistic Nb-In0.75Ga0.25As-Nb Josephson junctions. E-beam lithography was used to fabricate the Josephson junctions on an InGaAs chip. In contrast to our previous studies on long junctions that were fabricated by photolithography, in this study, we observe the induced superconductivity in an In0.75Ga0.25As quantum well at higher temperatures, between T = 0.3 and 1 K (3He cryostat temperature range). The induced superconducting gap of Δind= 0.65 meV was measured at lowest base temperature T = 300 mK. The effect of temperature and magnetic fields B on the induced superconductivity are presented. Our results suggest that our In0.75Ga0.25As heterostructure is a promising scalable material system for quantum processing and computing applications.

IEEE Transactions on Applied Superconductivity•Mar 6, 2018•18 citations
In this paper, we experimentally demonstrate a hybrid superconducting-semiconducting (S-Sm) circuit consisting of eight planar and ballistic Nb-In0.75Ga0.25As-Nb Josephson junctions. E-beam lithography was used to fabricate the Josephson junctions on an InGaAs chip. In contrast to our previous studies on long junctions that were fabricated by photolithography, in this study, we observe the induced superconductivity in an In0.75Ga0.25As quantum well at higher temperatures, between T= 0.3 and 1.4 K (3He cryostat temperature range). The induced superconducting gap of & #x0394;ind= 0.65 meV was measured at lowest base temperature T= 300 mK. The effect of temperature and magnetic fields B on the induced superconductivity are presented. Our results suggest that our In0.75Ga0.25As heterojunctions is a promising scalable material system for quantum processing and computing applications.
In this paper, we experimentally demonstrate a hybrid superconducting-semiconducting circuit consisting of eight planar and ballistic Nb-In0.75Ga0.25As-Nb Josephson junctions. E-beam lithography was used to fabricate the Josephson junctions on an InGaAs chip. In contrast to our previous studies on long junctions that were fabricated by photolithography, in this study, we observe the induced superconductivity in an In0.75Ga0.25As quantum well at higher temperatures, between T = 0.3 and 1 K (3He cryostat temperature range). The induced superconducting gap of Δind= 0.65 meV was measured at lowest base temperature T = 300 mK. The effect of temperature and magnetic fields B on the induced superconductivity are presented. Our results suggest that our In0.75Ga0.25As heterostructure is a promising scalable material system for quantum processing and computing applications.