High Kinetic Inductance Based Fluxonium Circuit

Azarin Zarassi, Jen‐Feng Hsu, Tzu-Chiao Chien +3 more

Yong-Qiang Xu, Rui Wu, Shun-Li Jiang +7 more

Nate Earnest, Yao Lu, Nicholas Irons +3 more

Trevyn F. Q. Larson, Sarah C. Jones, Tamás Kalmár +11 more

Disordered superconducting materials with high kinetic inductance are an important resource for generating nonlinearity in quantum circuits and creating high-impedance environments. In thin films fabricated from these materials, the combination of disorder and low effective dimensionality leads to increased order parameter fluctuations and enhanced kinetic inductance values. Among the challenges of harnessing these compounds in coherent devices are their proximity to the superconductor-insulator phase transition and the two-level systems located in the disordered structure. Here, we fabricate tungsten silicide wires from quasi-two-dimensional films and embed them into microwave resonators and fluxonium qubits, where the kinetic inductance provides the inductive part of the circuits. In this work, we study the dependence of loss on the frequency, disorder, and geometry of the devices, and find that the loss increases with the level of disorder and is dominated by the localized quasiparticles trapped in the spatial variations of the superconducting gap. High kinetic inductance materials are widely used in superconducting circuits, yet their loss mechanisms are not fully understood. Here the authors study quantum circuits incorporating nanowires made of quasi-2D disordered superconductor WSi and identify localized quasiparticles as the dominant source of loss.

Ilya N. Moskalenko, Ilya S. Besedin, Ilya A. Simakov +1 more

A superconducting fluxonium circuit is an RF-superconducting quantum interference device-type flux qubit that uses a large inductance built from an array of Josephson junctions or a high kinetic inductance material. This inductance suppresses charge sensitivity exponentially and flux sensitivity quadratically. In contrast to the transmon qubit, the anharmonicity of fluxonium can be large and positive, allowing for better separation between the low energy qubit manifold of the circuit and higher-lying excited states. Here, we propose a tunable coupling scheme for implementing two-qubit gates on fixed-frequency fluxonium qubits, biased at half flux quantum. In this system, both qubits and couplers are coupled capacitively and implemented as fluxonium circuits with an additional harmonic mode. We investigate the performance of the scheme by simulating a universal two-qubit fSim gate. In the proposed approach, we rely on a planar on-chip architecture for the whole device. Our design is compatible with existing hardware for transmon-based devices with the additional advantage of lower qubit frequency facilitating high-precision gating.

A. Kher, Peter K. Day, Byeong Ho Eom +2 more