Deposited dielectrics with low mm-submm loss will be of great benefit to on-chip superconducting circuits for mm-submm astronomy. Compared with planar chip designs, multilayer structures with deposited dielectrics allow for more compact circuit elements, and eliminate radiation losses at high frequencies. While recently hydrogenated amorphous silicon carbide has been demonstrated to exhibit low dielectric losses at mm-submm wavelengths, the origin of the mm-submm loss in hydrogenated amorphous silicon carbide remains unknown. We measured the 270-600 GHz dielectric losses of hydrogenated amorphous silicon carbide in superconducting microstrip lines. Furthermore, we measured the complex dielectric constant of the hydrogenated amorphous silicon carbide in the 3-100 THz range using Fourier transform spectroscopy. We modeled the loss data from 0.27-100 THz using a Maxwell-Helmholtz-Drude dispersion model. Our results demonstrate that phonon modes above 10 THz dominate the mm-submm losses in deposited dielectrics.
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits, and kinetic inductance parametric amplifiers. Compared with planar structures, multilayer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multilayer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measure the subkelvin and low-power microwave and millimeter-submillimeter-wave dielectric loss of hydrogenated amorphous silicon carbide (
a-SiC:H), using superconducting chips with Nb-Ti-
N/a-SiC:H/Nb-Ti-N microstrip resonators. We deposit the
a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of $400{\phantom{\rule{0.1em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$. The
a-SiC:H has a millimeter-submillimeter loss tangent ranging from $0.9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ at 270 GHz to $1.5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ at 385 GHz. The microwave loss tangent is $3.1\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}5}$. These are the lowest low-power subkelvin loss tangents that have been reported for microstrip resonators at millimeter-submillimeter and microwave frequencies. The
a-SiC:H films are free of blisters and have low stress: $\ensuremath{-}20$ MPa compressive at 200-nm thickness to 60 MPa tensile at 1000-nm thickness.