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Bulletin of the American Physical Society

Microwave Studies of Josephson Junctions Based on InAs Quantum Wells with an Epitaxial Superconductor

Gino V. Graziano, Joon Sue Lee, Mihir Pendharkar, C. J. Palmstrøm, Vlad Pribiag

Published Mar 7, 2018• 0 citations
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Voltage-tunable Josephson junctions (VT-JJs) are an emerging element in superconducting quantum electronics with potential to expand the functionality of conventional designs. While VT-JJs are largely compatible with wafer-scale semiconductor processing, their integration into quantum circuits remains a challenge due to unmitigated semiconductor microwave loss. Here, a deep mesa etch process, wherein the epitaxial material is removed except the VT-JJ device, will facilitate the integration of VT-JJs with low-microwave-loss circuit elements by allowing these circuit elements to be placed directly on a low-loss substrate. A Germanium quantum well is grown by Molecular Beam Epitaxy (MBE) on a float zone silicon substrate with in-situ deposited aluminum contacts. This combination allows the formation of an oxide-free superconductor-semiconductor interface. The deep mesa etch process is optimized to produce a sidewall taper sufficient for continuous metal deposition from the substrate to the top of the mesa for electrostatic gate electrodes and interconnects. The fabricated Josephson junctions demonstrate gate-tunable supercurrents with a maximum critical current over 100 nA and critical-current normal-resistance product of $8.63~μV$. These results demonstrate a pathway toward improved integration of voltage-tunable superconducting circuit elements with quantum electronic building blocks such as couplers and qubits.

arXiv:2606.28585•Jun 26, 2026•0 citations
We report microwave spectroscopy of Josephson junctions chains made from an epitaxial Al/InAs heterostructure. The chains exhibit superinductance, with characteristic wave impedance exceeding RQ=ℏ/(2e)2R_{Q} = \hbar/(2e)^{2}RQ​=ℏ/(2e)2. The planar nature of the junctions results in a large plasma frequency, with no measurable deviations from ideal dispersion up to 12 GHz12~\mathrm{GHz}12 GHz. Internal quality factors decrease sharply with frequency, which we describe with a simple loss model. The possibility of a loss mechanism intrinsic to the superconductor-semiconductor junction is considered.
Semiconductor-superconductor hybrid nanocircuits are of high interest because of their potential applications in quantum computing. Semiconductors with strong spin-orbit coupling and large g factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in detail. We have investigated a Josephson junction where the weak link is a two-dimensional electron gas (2DEG) hosted in an InAs/InGaAs heterostructure grown on a GaAs substrate. We employed the epitaxially grown Al layer as a superconducting contact to form an rf SQUID, and also to create a microwave resonator for sensing the Josephson inductance. We determined the gate-dependent current-phase relation and observed supercurrent interference in out-of-plane magnetic fields. With the application of an in-plane magnetic field, we induced asymmetry in the interference pattern, which was found to be anisotropic in the device plane.
Voltage-tunable Josephson junctions (VT-JJs) are an emerging element in superconducting quantum electronics with potential to expand the functionality of conventional designs. While VT-JJs are largely compatible with wafer-scale semiconductor processing, their integration into quantum circuits remains a challenge due to unmitigated semiconductor microwave loss. Here, a deep mesa etch process, wherein the epitaxial material is removed except the VT-JJ device, will facilitate the integration of VT-JJs with low-microwave-loss circuit elements by allowing these circuit elements to be placed directly on a low-loss substrate. A Germanium quantum well is grown by Molecular Beam Epitaxy (MBE) on a float zone silicon substrate with in-situ deposited aluminum contacts. This combination allows the formation of an oxide-free superconductor-semiconductor interface. The deep mesa etch process is optimized to produce a sidewall taper sufficient for continuous metal deposition from the substrate to the top of the mesa for electrostatic gate electrodes and interconnects. The fabricated Josephson junctions demonstrate gate-tunable supercurrents with a maximum critical current over 100 nA and critical-current normal-resistance product of 8.63 μV8.63~μV8.63 μV. These results demonstrate a pathway toward improved integration of voltage-tunable superconducting circuit elements with quantum electronic building blocks such as couplers and qubits.