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Superconductor Science and Technology

Prospects for faster, higher-temperature superconducting nanowire single-photon detectors

Daniel F. Santavicca

Published Feb 13, 2018• 13 citations
Publisher
DOI
10.1088/1361-6668/aaaed9

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Superconducting nanowire single photon detector (SNSPD) is a leading candidate for applications requiring the fundamental limit of light detection at high detection rates. While SNSPD technology employing nanowires from conventional low temperature superconducting detectors is mature with several commercial solutions, other material options with higher transition temperature approaching liquid nitrogen with faster signal responses are actively being explored. In this context, we develop a comprehensive model that predicts the final potential response from an SNSPD incorporating several physical and material aspects. A phase diagram of photon detection is developed that describes the latching phases and the photon sensitivity as a function of biasing current and temperature for both low temperature and high temperature superconductors. On the one hand, while low temperature superconductors are observed to be more sensitive than high temperature superconductors (HTSs) under any given biasing condition, a biasing window for a single photon detection with HTS nanowires is identified. On the other hand, HTS nanowires demonstrate three orders of magnitude faster response times than the low temperature superconductor nanowire at the same biasing condition, making it uniquely suited for several practical applications.
Superconducting nanowire single photon detector (SNSPD), as a new type of superconducting single photon detector (SPD), has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano-imprint technology. In this process, a combination of hot embossing nano-imprint lithography (HE-NIL) and ultraviolet nano-imprint lithography (UV-NIL) is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature ( T c ) of the superconducting NbN meander nanowires is about 5 K and the critical current ( I c ) is about 3.5 μA at 2.5 K.