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International Conference on Millimeter and Submillimeter Waves and Applications 1994

Hot-electron superconducting mixers for 20-500 GHz operation

A. Dzardanov

Published Jan 1, 1994• 2 citations
Publisher

Abstract

Bolometric mixers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mixers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO2 substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.

DOI
10.1117/12.2303174

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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.

IEEE Transactions on Applied Superconductivity•Jun 1, 1999•6 citations
Bolometric mixers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mixers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO2 substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies.
Mixing at 20 GHz in niobium superconducting thin-film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the nonlinear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a conversion loss between 1-8 dB and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-40 K. A simple theory that is based on the assumption that the small signal resistance is linearly dependent on power is presented. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.>
This thesis investigates the prospects of some different superconducting mixers integrated with planar antennas for the millimeter and submillimeter regime. Two kinds of Superconductor/Insulator/Superconductor (SIS) tunnel junctions for use in mixers have been fabricated; Nb/PbBi edge junctions and Nb trilayer junctions. One of the very high quality trilayer mixers is currently operating in a 350 GHz radio-telescope heterodyne-receiver. The reduced sensitivity of SIS mixers for frequencies above the gap frequency (?700 GHz) of the superconductors has directed the interest towards another type of superconducting mixer device, the superconducting Hot Electron Bolometer (HEB). Various types of this device have been studied; Nb devices for scale-measurements at 20 GHz to more easily verify some of the theoretical background of the HEB, NbN waveguide devices for 100 GHz, and NbN devices integrated with planar antennas for a quasi-optical mixer at 350 GHz. Two types of planar antennas have been used; the endfire "Broken" Linearly Tapered Slotline Antenna (BLTSA) on a thin dielectric membrane, and the double dipole antenna on a quartz substrate lens. The beam pattern of the BLTSA has been examined theoretically and measured at 40 GHz with antennas supported by Kapton foil, and at 350 and 800 GHz with antennas on thin dielectric SiOxNy membranes. Measurements of the 20 GHz Nb HEB show a mixer conversion loss close to 0 dB for IF frequencies below 40 MHz. The maximum IF bandwidth given by the electron temperature relaxation time corresponds to a frequency of about 80 MHz. A DSB mixer noise temperature of only a few hundred Kelvin has been measured. Corresponding measurements of NbN devices at 100 and 350 GHz give a mixer conversion loss of about 6-10 dB and an IF bandwidth of about 700 to 1000 MHz. The output noise is found to be dominated by electron temperature fluctuations with an equivalent noise temperature of about 100 K, and a frequency dependence equal to that of the IF signal. Phenomenological expressions for conversion loss, noise, and IF impedance have been compared measurements and shows good agreement. The quasioptical NbN HEB mixers are still under development with respect to film quality and coupling to radiation, why the mixer performance of these is expected to improve.
Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.>
Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. Work described in this thesis comprises: The design of a prototype receiver using quasi-optical coupling. Device fabrication involving reactive magnetron sputtering of NbN films and lithographic definition of the antenna integrated mixer. An investigation of the receiver performance at frequencies between 0.6 THz and 2.5 THz. The best performance is obtained with HEB mixers made from NbN films with a thickness d = 3-3.5 nm and a critical temperature T c = 9 - 9.5 K. Double-side band receiver noise temperatures are 530 K at 0.6 THz, 650 K at 1.6 THz and 1100 K at 2.5 THz. Corrected for losses in the receiver input optics, these values amount to only 10 times the theoretical quantum limit. MgO as the substrate material has been shown to provide improved acoustic coupling between NbN film and the substrate compared to other materials such as Si or sapphire. A maximum IF gain bandwidth of 4.5 GHz has been measured under the same operating conditions which yield lowest noise temperature. The local oscilltor power requirement is ~250 nW absorbed in the bolometer. Quasi-optically coupled HEB mixers have become the device-of-choice for radio astronomical applications in the frequency regime at and above 1 THz.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.