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انجمن اپتیک و فوتونیک ایران

Optical Bistability in 1D Photonic Crystal with External Voltage for Designing of Controllable all-Optical Switching

Fatemeh Moslemi, Kazem Jamshidi-Ghaleh

Published Mar 15, 2017• 0 citations
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Journal of Applied Physics•Sep 12, 2017•4 citations
Abstract The optical bistability (OB) and multistability (OM) in one-dimensional photonic crystals doped with carbon-nanotube quantum dots (CNT QDs) is theoretically investigated. Our investigations show that due to spin–orbit coupling in CNT QDs the threshold of optical bistability can be adjusted. Also, the switching from OB to OM, or vice versa, can be achieved by controlling the transverse magnetic field. Our proposed model can be used as a suitable structure based on CNT QDs for realizing all-optical switching devices. Moreover, we realize that the controlling of OB and OM can be done without changing the thickness of the layers.
In this paper, we propose an optical bistable structure based on a single graphene layer sandwiched between two magnetooptical layers which are located between two photonic crystals. It is indicated that such structure shows optical bistability behaviors, in the near infrared range, which can be efficiently controlled with small external magnetic fields lower than 1.5 mT. Such weak external magnetic fields cannot affect the graphene layer and the dependence of bistability phenomenon on the magnetic field results from the presence of magnetooptical layers and their influences on the resonance frequency of the structure. Both switch-up and switch-down thresholds can be significantly adjusted by variation of the external magnetic field. Furthermore, the width of hysteresis loop enhances with increasing the magnetic field. To obtain a high tunability of bistability with external magnetic fields, the thickness of magnetooptical layers should be larger than a special value. It is also found that the increase of the Fermi energy level of graphene leads to the enhancement of both switch-up and switch-down thresholds as well as the width of the hysteresis loop. Finally, it is confirmed that optical bistability can be manipulated by changing the incident illumination angle.
Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.